Datasheet Texas Instruments CSD23203W — Ficha de datos
| Fabricante | Texas Instruments |
| Serie | CSD23203W |
CSD23203W 8 V P-Channel NexFET® „MOSFET de potencia
Hojas de datos
CSD23203W –8-V P-Channel NexFET Power MOSFET datasheet
PDF, 378 Kb, Revisión: A, Archivo publicado: agosto 2, 2016
Extracto del documento
Estado
| CSD23203W | CSD23203WT | |
|---|---|---|
| Estado del ciclo de vida | Activo (Recomendado para nuevos diseños) | Activo (Recomendado para nuevos diseños) |
| Disponibilidad de muestra del fabricante | Sí | No |
Embalaje
| CSD23203W | CSD23203WT | |
|---|---|---|
| N | 1 | 2 |
| Pin | 6 | 6 |
| Package Type | YZC | YZC |
| Industry STD Term | DSBGA | DSBGA |
| JEDEC Code | R-XBGA-N | R-XBGA-N |
| Package QTY | 3000 | 250 |
| Carrier | LARGE T&R | SMALL T&R |
| Device Marking | 23203 | 23203 |
| Width (mm) | 1.8 | 1.8 |
| Length (mm) | 1.5 | 1.5 |
| Thickness (mm) | 2 | 2 |
| Pitch (mm) | .5 | .5 |
| Max Height (mm) | 1 | 1 |
| Mechanical Data | Descargar | Descargar |
Paramétricos
| Parameters / Models | CSD23203W | CSD23203WT |
|---|---|---|
| Configuration | Single | Single |
| Id Max Cont, A | -3 | -3 |
| Id Peak(Max), A | -54 | -54 |
| Package, mm | WLP 1.0x1.5 | WLP 1.0x1.5 |
| QG Typ, nC | 4.9 | 4.9 |
| QGD Typ, nC | 0.6 | 0.6 |
| QGS Typ, nC | 1.3 | 1.3 |
| Rds(on) Max at VGS=1.8V, mOhms | 53 | 53 |
| Rds(on) Max at VGS=2.5V, mOhms | 26.5 | 26.5 |
| Rds(on) Max at VGS=4.5V, mOhms | 19.4 | 19.4 |
| VDS, V | -8 | -8 |
| VGS, V | -6 | -6 |
| VGSTH Typ, V | -0.8 | -0.8 |
Plan ecológico
| CSD23203W | CSD23203WT | |
|---|---|---|
| RoHS | Obediente | Obediente |
Linea modelo
Serie: CSD23203W (2)
Clasificación del fabricante
- Semiconductors> Power Management> Power MOSFET> P-Channel MOSFET Transistor