Datasheet Texas Instruments TLV2316 — Ficha de datos
| Fabricante | Texas Instruments |
| Serie | TLV2316 |
Amplificador operacional de 10 MHz, bajo ruido, RRIO, CMOS para sistemas sensibles al costo
Hojas de datos
TLVx316 10-MHz, Rail-to-Rail Input/Output, Low-Voltage, 1.8-V CMOS Operational Amplifiers datasheet
PDF, 1.8 Mb, Revisión: A, Archivo publicado: sept 23, 2016
Extracto del documento
Estado
| TLV2316IDGKR | TLV2316IDGKT | TLV2316IDR | |
|---|---|---|---|
| Estado del ciclo de vida | Activo (Recomendado para nuevos diseños) | Activo (Recomendado para nuevos diseños) | Activo (Recomendado para nuevos diseños) |
| Disponibilidad de muestra del fabricante | Sí | Sí | No |
Embalaje
| TLV2316IDGKR | TLV2316IDGKT | TLV2316IDR | |
|---|---|---|---|
| N | 1 | 2 | 3 |
| Pin | 8 | 8 | 8 |
| Package Type | DGK | DGK | D |
| Industry STD Term | VSSOP | VSSOP | SOIC |
| JEDEC Code | R-PDSO-G | R-PDSO-G | R-PDSO-G |
| Package QTY | 2500 | 250 | 2500 |
| Carrier | LARGE T&R | SMALL T&R | LARGE T&R |
| Device Marking | 12X6 | 12X6 | V2316 |
| Width (mm) | 3 | 3 | 3.91 |
| Length (mm) | 3 | 3 | 4.9 |
| Thickness (mm) | .97 | .97 | 1.58 |
| Pitch (mm) | .65 | .65 | 1.27 |
| Max Height (mm) | 1.07 | 1.07 | 1.75 |
| Mechanical Data | Descargar | Descargar | Descargar |
Paramétricos
| Parameters / Models | TLV2316IDGKR | TLV2316IDGKT | TLV2316IDR |
|---|---|---|---|
| Additional Features | Cost Optimized,EMI Hardened | Cost Optimized,EMI Hardened | Cost Optimized,EMI Hardened |
| Architecture | CMOS | CMOS | CMOS |
| CMRR(Min), dB | 72 | 72 | 72 |
| CMRR(Typ), dB | 90 | 90 | 90 |
| GBW(Typ), MHz | 10 | 10 | 10 |
| Iq per channel(Max), mA | 575 | 575 | 575 |
| Iq per channel(Typ), mA | 0.4 | 0.4 | 0.4 |
| Number of Channels | 2 | 2 | 2 |
| Offset Drift(Typ), uV/C | 2 | 2 | 2 |
| Operating Temperature Range, C | -40 to 125 | -40 to 125 | -40 to 125 |
| Output Current(Typ), mA | 50 | 50 | 50 |
| Package Group | VSSOP | VSSOP | SOIC |
| Package Size: mm2:W x L, PKG | 8VSSOP: 15 mm2: 4.9 x 3(VSSOP) | 8VSSOP: 15 mm2: 4.9 x 3(VSSOP) | 8SOIC: 29 mm2: 6 x 4.9(SOIC) |
| Rail-to-Rail | In,Out | In,Out | In,Out |
| Rating | Catalog | Catalog | Catalog |
| Slew Rate(Typ), V/us | 6 | 6 | 6 |
| Total Supply Voltage(Max), +5V=5, +/-5V=10 | 5.5 | 5.5 | 5.5 |
| Total Supply Voltage(Min), +5V=5, +/-5V=10 | 1.8 | 1.8 | 1.8 |
| Vn at 1kHz(Typ), nV/rtHz | 12 | 12 | 12 |
| Vos (Offset Voltage @ 25C)(Max), mV | 3 | 3 | 3 |
Plan ecológico
| TLV2316IDGKR | TLV2316IDGKT | TLV2316IDR | |
|---|---|---|---|
| RoHS | Obediente | Obediente | Obediente |
Linea modelo
Serie: TLV2316 (3)
Clasificación del fabricante
- Semiconductors> Amplifiers> Operational Amplifiers (Op Amps)> General-Purpose Op Amps