Datasheet Microchip 2N7000-G — Ficha de datos

Supertex inc. 2N7000 N-Channel Enhancement-Mode
Vertical DMOS FETs
Features General Description ►► Free from secondary breakdown
►► Low power drive requirement
►► Ease of paralleling
►► Low CISS and fast switching speeds
►► Excellent thermal stability
►► Integral source-drain diode
►► High input impedance and high gain The Supertex 2N7000 is an enhancement-mode (normallyoff) transistor that utilizes a vertical DMOS structure and
Supertex's well-proven silicon-gate manufacturing process.
This combination produces a device with the power handling
capabilities of bipolar transistors, and the high input impedance
and positive temperature coefficient inherent in MOS devices.
Characteristic of all MOS structures, this device is free from
thermal runaway and thermally-induced secondary breakdown. Applications Supertex's vertical DMOS FETs are ideally suited to a wide
range of switching and amplifying applications where very
low threshold voltage, high breakdown voltage, high input
impedance, low input capacitance, and fast switching speeds
are desired. ►► Motor controls
►► Converters
►► Amplifiers
►► Switches
►► Power supply circuits …