Datasheet Infineon IRF3205 — Ficha de datos

PD-94791B IRF3205PbF
l
l
l
l
l
l
l Advanced Process Technology
Ultra Low On-Resistance
Dynamic dv/dt Rating
175°C Operating Temperature
Fast Switching
Fully Avalanche Rated
Lead-Free HEXFET® Power MOSFET
D VDSS = 55V
RDS(on) = 8.0mΩ G ID = 110A… S Description Advanced HEXFET® Power MOSFETs from International
Rectifier utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This benefit,
combined with the fast switching speed and ruggedized
device design that HEXFET power MOSFETs are well known
for, provides the designer with an extremely efficient and
reliable device for use in a wide variety of applications.
The TO-220 package is universally preferred for all …