Datasheet New Jersey Semiconductor 2N4360 — Ficha de datos

FabricanteNew Jersey Semiconductor
Serie2N4360
Numero de parte2N4360

Trans MOSFET P-CH Si 20V

Precios

Paramétricos

CategoryPower MOSFET
Channel TypeP
ConfigurationSingle
MaterialSi
Maximum Drain Source Voltage20 V
Maximum Gate Source Voltage-20 V
Maximum Power Dissipation200 mW
Number of Elements per Chip1
Operating Temperature Max125 °C
Operating Temperature Min-55 °C

Clasificación del fabricante

  • MOSFET