Datasheet Nexperia PSMN0R9-30ULDX — Ficha de datos

PSMN0R9-30ULD N-channel 30 V, 0.87 mО©, 300 A logic level MOSFET
in SOT1023A enhanced package for UL2595, using
NextPowerS3 Schottky-Plus Technology
23 May 2018 Product data sheet 1. General description
SOT1023A with improved creepage and clearance to meet UL2595 requirements. 300 Amp logic
level gate drive N-channel enhancement mode MOSFET in LFPAK56 package. NextPowerS3
portfolio utilising Nexperia’s unique “SchottkyPlus” technology delivers high efficiency, low spiking
performance usually associated with MOSFETs with an integrated Schottky or Schottky-like diode
but without problematic high leakage current. NextPowerS3 is particularly suited to high efficiency
applications at high switching frequencies. 2. Features and benefits Improved creepage and clearance – meets the requirements of UL2595
300 A capability
Avalanche rated, 100% tested at IAS = 190 A
Ultra low QG, QGD and QOSS for high system efficiency, especially at higher switching
frequencies
Superfast switching with soft-recovery; s-factor > 1
Low spiking and ringing for low EMI designs
Unique “SchottkyPlus” technology; Schottky-like performance with < 1 μA leakage at 25 °C
Optimised for 4.5 V gate drive
Low parasitic inductance and resistance
High reliability clip bonded and solder die attach Power SO8 package; no glue, no wire bonds,
qualified to 150 В°C
Wave solderable; exposed leads for optimal visual solder inspection 3. Applications Brushed and brushless motor control
Battery powered appliances where enhanced creepage and clearance is required to meet …