Datasheet Diodes DGTD65T60S2PT — Ficha de datos

DGTD65T60S2PT
650V FIELD STOP IGBT IN TO-247
Description Features The DGTD65T60S2PT is produced using advanced Field Stop Trench
IGBT 2nd Generation Technology, which not only gives high-switching
efficiency, but is also extremely rugged and excellent quality for
applications where low conduction losses are essential. 
 High Speed Switching & Low Power Loss
VCE(sat) = 1.85V @ IC = 60A 
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 High Input Impedance
trr = 110ns (typ) @ diF/dt = 500A/µs
Eoff = 0.53mJ @ TC=25°C 
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 Maximum Junction Temperature 175°C
Lead-Free Finish; RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3) Applications Mechanical Data 
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 UPS
Welder …