PDF, 1.1 Mb, Idioma: en, Archivo subido: jun 12, 2019, Páginas: 12
Silicon Carbide Power MOSFET C3M Planar MOSFET Technology N-Channel Enhancement Mode
Extracto del documento
C3M0016120K VDS 1200 V ID @ 25˚C Silicon Carbide Power MOSFET
TM
C3M MOSFET Technology RDS(on) 115 A 16 mΩ N-Channel Enhancement Mode Features • • • • • • • Package 3rd generation SiC MOSFET technology
Optimized package with separate driver source pin
8mm of creepage distance between drain and source
High blocking voltage with low on-resistance
High-speed switching with low capacitances
Fast intrinsic diode with low reverse recovery (Qrr)
Halogen free, RoHS compliant TAB
Drain Benefits • • • • • Drain
(Pin 1, TAB) Reduce switching losses and minimize gate ringing
Higher system efficiency
Reduce cooling requirements
Increase power density
Increase system switching frequency 1
D 2 3 4
S S G Gate
(Pin 4)
Driver
Source
(Pin 3) Applications • • • • • Solar inverters
EV motor drive High voltage DC/DC converters
Switched mode power supplies …
