Datasheet Nexperia BUK7V4R2-40HX — Ficha de datos

BUK7V4R2-40H Dual N-channel 40 V, 4.2 mOhm standard level MOSFET in
LFPAK56D (half-bridge configuration)
11 February 2021 Product data sheet 1. General description
Dual, standard level N-channel MOSFET in an LFPAK56D package
(half-bridge configuration), using Trench 9 TrenchMOS technology. This
product has been designed and qualified to AEC-Q101.
An internal connection is made between the source (S1) of the highside FET to the drain (D2) of the low-side FET, making the device ideal
to use as a half-bridge switch in high-performance automotive PWM
applications. D1 G1
S1, D2
G2
S2 aaa-028081 2. Features and benefits
• • •
• LFPAK56D package with half-bridge configuration enables:
• Reduced PCB layout complexity
• PCB shrinkage through reduced component footprint for 3-phase motor drive
• Improved system level Rth(j-amb) due to optimized package design
• Lower parasitic inductance to support higher efficiency
• Footprint compatibility with LFPAK56D Dual package
Advanced AEC-Q101 grade Trench 9 silicon technology:
• Low power losses, high power density
• Superior avalanche performance
• Repetitive avalanche rated …