Datasheet Analog Devices HMC1082CHIP — Ficha de datos

FEATURES FUNCTIONAL BLOCK DIAGRAM High saturated output power: 26 dBm with 24% PAE
High gain: 24 dB typical
High output IP3: 36 dBm typical
High output P1dB: 25.5 dBm
Die size: 2.19 mm × 1.05 × 0.1 mm APPLICATIONS VDD2 VDD3 HMC1082CHIP
1 RFOUT RFIN
2.5kΩ Software defined radios
Electronics warfare (EW)
Radar applications
Electronic countermeasures (ECMs) 4 3 2 VDD1 5 2.5kΩ VGG 20651-001 Data Sheet 5.5 GHz to 18 GHz, GaAs, pHEMT, MMIC,
Medium Power Amplifier
HMC1082CHIP 6 Figure 1. GENERAL DESCRIPTION
The HMC1082CHIP is a gallium arsenide (GaAs), monolithic
microwave integrated circuit (MMIC), pseudomorphic high
electron mobility transistor (pHEMT), driver amplifier that
operates from 5.5 GHz to 18 GHz. The HMC1082CHIP provides
a typical gain of 24 dB, 36 dBm output IP3, and 25.5 dBm of
output power for 1 dB compression, requiring only 220 mA Rev. B from a 5 V supply voltage. The saturated output power (PSAT)
is 26 dBm with 24% power added efficiency (PAE).
The HMC1082CHIP is an ideal driver amplifier for a wide range
of applications including point to point radios from 5.5 GHz to
18 GHz and marine radars at 9 GHz. The HMC1082CHIP can
also be used for 6 GHz to 18 GHz EW and ECM applications. Document Feedback Information furnished by Analog Devices is believed to be accurate and reliable. However, no …

HMC1082LP4E
v05.1018 AMPLIFIERS -LINEAR & POWER -SMT GaAs pHEMT MMIC MEDIUM
POWER AMPLIFIER, 5.5 -18 GHz
Typical Applications Features The HMC1082LP4E is ideal for: High Saturated Output Power: 26 dBm @ 26% PAE • Point-to-Point Radios High Output IP3: 35 dBm • Point-to-Multi-Point Radios High Gain: 22 dB • VSAT & SATCOM High P1dB Output Power: 24 dBm • Marine Radar DC Supply: +5V @ 220 mA • Military EW & ECM Compact 24 Lead 4x4 mm SMT Package: 16 mm2 Functional Diagram General Description
The HMC1082LP4E is a GaAs pHEMT MMIC driver
amplifier with an integrated temperature compensated
on-chip power detector which operates between 5.5
and 18 GHz. The amplifier provides 22 dB of gain, +35
dBm Output IP3, and +24 dBm of output power at 1 dB
gain compression, while requiring 220 mA from a +5V
supply. The HMC1082LP4E is capable of supplying
+26 dBm of saturated output power with 26 % PAE
and is housed in a compact leadless 4x4 mm plastic
surface mount package.
The HMC1082LP4E is an ideal driver amplifier for a
wide range of applications including point-to-point
radio from 5.5 to 18 GHz and marine radar at 9 GHz.
The HMC1082LP4E may also be used for 6 to 18 GHz
EW and ECM applications. Electrical Specifications TA = +25° C, Vdd1 = Vdd2 = Vdd3 = +5V, Idd = +220 mA [1]
Parameter Min Frequency Range Typ. Max Min 5.5 -6.5 Gain 21.5 23.5 Typ. 20.5 22.5 7.5 dBm 14 17.5 dBm 10 Output Third Order Intercept (IP3) [2] Supply Current (Idd) 24 21 GHz 12 22 21 Units dB Output Return Loss 24 20 Max dB/°C Input Return Loss Saturated Output Power (Psat) Typ
17 -18
22 0.0101 Output Power for 1 dB Compression (P1dB) Min 0.015 0.0121 Gain Variation over temperature Max 6.5 -17 23.5 dBm 25.5 26 20.5 24.5 dBm 36 35 33.5 dBm 220 220 220 mA [1] Adjust Vgg between -2 to 0V to achieve Idd = 220mA typical
[2] Measurement taken at Pout / tone = +12dBm 1 Information furnished by Analog Devices is believed to be accurate and reliable. However, no …