Datasheet Analog Devices HMC-APH608-DIE — Ficha de datos

HMC-APH608
v03.0409 LINEAR & POWER AMPLIFIERS -CHIP 3 GaAs HEMT MMIC 1 WATT POWER
AMPLIFIER, 22.5 -26.5 GHz Typical Applications Features This HMC-APH608 is ideal for: Output IP3: +40 dBm • Point-to-Point Radios P1dB: +30 dBm • Point-to-Multi-Point Radios Gain: 17 dB • VSAT Supply Voltage: +5V • Military & Space 50 Ohm Matched Input/Output
Die Size: 4.49 x 1.31 x 0.1 mm General Description Functional Diagram The HMC-APH608 is a high dynamic range, two stage
GaAs HEMT MMIC 1 Watt Power Amplifier which
operates between 22.5 and 26.5 GHz. The HMCAPH608 provides 17 dB of gain, and an output power
of +30 dBm at 1 dB compression from a +5V supply
voltage. All bond pads and the die backside are Ti/Au
metallized and the amplifier device is fully passivated
for reliable operation. The HMC-APH608 GaAs
HEMT MMIC 1 Watt Power Amplifier is compatible
with conventional die attach methods, as well as
thermocompression and thermosonic wire bonding,
making it ideal for MCM and hybrid microcircuit
applications. All data Shown herein is measured with
the chip in a 50 Ohm environment and contacted with
RF probes. Electrical Specifi cations[1], TA = +25° C, Vdd1=Vdd2 = 5V, Idd1+Idd2 = 950 mA [2]
Parameter Min. Frequency Range
Gain Typ. Max. Min. 22.5 -26.5
14.5 17 16 Typ. Max. Units 24 -26.5 GHz 17 dB Input Return Loss 8 11 dB Output Return Loss 9 12 dB Output power for 1dB Compression (P1dB) 27 30 28 30 dBm Output Third Order Intercept (IP3) 36 39 37 40 dBm 950 mA Supply Current (Idd1+Idd2) 950 [1] Unless otherwise indicated, all measurements are from probed die
[2] Adjust Vgg1=Vgg2 between -1V to +0.3V (typ. -0.5V) to achieve Idd1 = 350 mA, Idd2 = 600 mA 3 -214 For price,
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