Datasheet Analog Devices HMC409LP4ETR — Ficha de datos

HMC409LP4E
v04.1217 Amplifiers -Linear & Power -SMT GaAs InGaP HBT 1 WATT
POWER AMPLIFIER, 3.3 -3.8 GHz
Typical Applications Features This amplifier is ideal for use as a power
amplifier for 3.3 -3.8 GHz applications: Gain: 31 dB • WiMAX 802.16 2% EVM @ Pout = +22 dBm 40% PAE @ +32.5 dBm pout • Fixed Wireless Access with 54Mbps OFDM Signal • Wireless Local Loop +46 dBm Output IP3
Integrated Power Control (Vpd) Functional Diagram Single +5V Supply General Description
The HMC409LP4E are high efficiency GaAs InGaP
HBT MMIC Power amplifiers operating from 3.3 to
3.8 GHz. The amplifier is packaged in a low cost,
leadless SMT package. Utilizing a minimum of
external components the amplifier provides 31 dB
of gain and +32.5 dBm of saturated power from a
+5V supply voltage. The power control (Vpd) can be
used for full power down or RF output power/current
control. For +22 dBm OFDM output power (64 QAM,
54 Mbps), the HMC409LP4E achieve an error vector
magnitude (EVM) of 2%, meeting WiMAX 802.16 linearity requirements. Electrical Specifications, TA = +25° C, Vs = +5V, Vpd = +5V, Vbias=+5V
Parameter Min. Frequency Range Typ. Max. Min. 3.3 -3.4 Gain 30 Gain Variation Over Temperature 32
0.04 Input Return Loss 29
0.05 28 30 41 45 Saturated Output Power (Psat) Error Vector Magnitude @ 3.5 GHz
(54 Mbps OFDM Signal @ +22 dBm Pout) 28
0.05 30.5 42 45.5 Typ. Units
GHz 30 dB 15 0.045 dB/ °C …