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- 30V, 100mA Low Power LDO The HT75xx-1 series is a set of three-terminal low power high voltage implemented in CMOS technology. They can deliver 100mA output current and allow an input voltage as high as 30V. They are available with several fixed ...
- 30V, 100mA Low Power LDO The HT75xx-1 series is a set of three-terminal low power high voltage implemented in CMOS technology. They can deliver 100mA output current and allow an input voltage as high as 30V. They are available with several fixed ...
- 30V, 100mA Low Power LDO The HT75xx-1 series is a set of three-terminal low power high voltage implemented in CMOS technology. They can deliver 100mA output current and allow an input voltage as high as 30V. They are available with several fixed ...
- 30V, 100mA Low Power LDO The HT75xx-1 series is a set of three-terminal low power high voltage implemented in CMOS technology. They can deliver 100mA output current and allow an input voltage as high as 30V. They are available with several fixed ...
- 30V, 100mA Low Power LDO The HT75xx-1 series is a set of three-terminal low power high voltage implemented in CMOS technology. They can deliver 100mA output current and allow an input voltage as high as 30V. They are available with several fixed ...
- 30V, 100mA Low Power LDO The HT75xx-1 series is a set of three-terminal low power high voltage implemented in CMOS technology. They can deliver 100mA output current and allow an input voltage as high as 30V. They are available with several fixed ...
- 30V, 100mA Low Power LDO The HT75xx-1 series is a set of three-terminal low power high voltage implemented in CMOS technology. They can deliver 100mA output current and allow an input voltage as high as 30V. They are available with several fixed ...
- 30V, 100mA Low Power LDO The HT75xx-1 series is a set of three-terminal low power high voltage implemented in CMOS technology. They can deliver 100mA output current and allow an input voltage as high as 30V. They are available with several fixed ...
- 30V, 100mA Low Power LDO The HT75xx-1 series is a set of three-terminal low power high voltage implemented in CMOS technology. They can deliver 100mA output current and allow an input voltage as high as 30V. They are available with several fixed ...
- 30V, 100mA Low Power LDO The HT75xx-1 series is a set of three-terminal low power high voltage implemented in CMOS technology. They can deliver 100mA output current and allow an input voltage as high as 30V. They are available with several fixed ...
- 30V, 100mA Low Power LDO The HT75xx-1 series is a set of three-terminal low power high voltage implemented in CMOS technology. They can deliver 100mA output current and allow an input voltage as high as 30V. They are available with several fixed ...
- 30V, 100mA Low Power LDO The HT75xx-1 series is a set of three-terminal low power high voltage implemented in CMOS technology. They can deliver 100mA output current and allow an input voltage as high as 30V. They are available with several fixed ...
Circuito integrado programable de señal mixta GreenPAK, rango de VDD: 1,71-5,5 V, 10 GPIO, 2 ACMP, programable en múltiples momentos, I2C en encapsulado STQFN-12 El SLG46801 integra las funciones de señal mixta más populares con memoria programable ...
MOSFET de carburo de silicio de canal N, 1700 V, 40 A, 72 mΩ, encapsulado TO-247-3L. El MOSFET de SiC de la serie JX-MT3 en encapsulado TO-247-3L garantiza un funcionamiento estable a altas temperaturas para sistemas de alta densidad de potencia y ...- MOSFET de carburo de silicio de canal N, 1200 V, 60 A, 45 mΩ, encapsulado TO-247-3. El MOSFET de SiC de la serie JX-MT3 en encapsulado TO-247-3 garantiza un funcionamiento estable a altas temperaturas para sistemas de alta densidad de potencia y ...
- MOSFET de canal N de SiC de 1700 V en encapsulado TO-247 Los MOSFET de carburo de silicio (SiC) utilizan una tecnología completamente nueva que proporciona un rendimiento de conmutación superior y una mayor fiabilidad en comparación con el silicio. ...
- MOSFET de carburo de silicio de canal N, 1700 V, 40 A, 72 mΩ, encapsulado TO-247-3L. El MOSFET de SiC de la serie JX-MT3 en encapsulado TO-247-3L garantiza un funcionamiento estable a altas temperaturas para sistemas de alta densidad de potencia y ...
- MOSFET de canal N de SiC de 3300 V en encapsulado TO-247 Los MOSFET de carburo de silicio (SiC) utilizan una tecnología completamente nueva que proporciona un rendimiento de conmutación superior y una mayor fiabilidad en comparación con el silicio. ...
- Controlador elevador-reductor de 4 interruptores en paralelo de 70 V con detección de corriente DCR mediante inductor. El LTC7878 es un controlador regulador de conmutación elevador-reductor de alto rendimiento que funciona con una tensión de ...
- Controlador PWM El controlador PWM SG3525A ofrece un rendimiento mejorado y un menor número de componentes externos al utilizarse para controlar todo tipo de fuentes de alimentación conmutadas. La referencia de +5,1 V integrada se ajusta a +/-1% y ...