NPN SILICON PLANAR
SMALL SIGNAL TRANSISTOR ZTX300 ZTX300 ISSUE 2 MARCH 94 TYPICAL CHARACTERISTICS
0.95 0.25 0.90 0.20 VCE(sat) -(Volts) VBE(sat) -(Volts) IC/IB=30 IC/IB=10
0.85 IC/IB=30 0.80 0.75 C
B 0.15 IC/IB=10 0.70
10 20 30 40 50 0 60 ABSOLUTE MAXIMUM RATINGS. 10 20 IC -Collector Current (mA) 30 40 50 60 IC -Collector Current (mA) VBE(sat) v IC VCE(sat) v IC 1.0
VCE=6V IC=50mA
IB=5mA
200 % Change of hFE VBE(sat) -(Volts) 0.9 0.8
IC=10mA
IB=1mA 0.7 0.6 -100 -50 0 50 100 100
IC=100µA 50 -100 -50 0 50 100 Ambient Temperature (°C) VBE(sat) v Ambient Temperature hFE v Ambient Temperature -55°C
+25°C
+100°C 100 50 0.1 IC=50mA
IC=10mA Ambient Temperature (°C) 150 0 150 0 150 VCE(sat) -(Volts) % Change of hFE 0.5 1 10 100 1000 IC -Collector Current (mA) SYMBOL VALUE UNIT Collector-Base Voltage VCBO 25 V Collector-Emitter Voltage VCEO 25 V Emitter-Base Voltage VEBO 5 V Continuous Collector Current IC 500 mA 300 mW -55 to +175 °C Power Dissipation at Tamb=25°C Ptot Operating and Storage Temperature Range Tj:Tstg ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
PARAMETER SYMBOL MIN. UNIT CONDITIONS. Collector-Base
Breakdown Voltage V(BR)CBO 25 TYP. MAX. V IC=10µ A, IE=0 Collector-Emitter
Sustaining Voltage VCEO(sus) 25 V IC=5mA, IB=0 Emitter-Base
Breakdown Voltage V(BR)EBO 5 V IE=10µ A, IC=0 Collector Cut-Off
Current ICBO 0.2 µA VCB=25V, IE=0 Emitter Cut-Off Current IEBO 0.2 µA VEB=4V, IC=0 Collector-Emitter
Saturation Voltage VCE(sat) 0.35 V IC=50mA, IB=5mA* 0.18 Base-Emitter
Saturation Voltage VBE(sat) 0.65 1.0 V IC=10mA, IB=1mA* 300 0.16 IC=50mA
IB=5mA Static Forward Current hFE …
