Datasheet ZXMN6A11DN8TA - Diodes MOSFET, DUAL, N, 60 V, SO-8 — Ficha de datos
Part Number: ZXMN6A11DN8TA
Descripción detallada
Manufacturer: Diodes
Description: MOSFET, DUAL, N, 60 V, SO-8
Docket:
ZXMN6A11DN8 60V SO8 Dual N-channel enhancement mode MOSFET
Summary
V(BR)DSS 60 RDS(on) ( ) 0.120 @ VGS= 10V 0.180 @ VGS= 4.5V ID (A) 3.2 2.6
Description
This new generation trench MOSFET from Zetex features a unique structure combining the benefits of low on-resistance and fast switching, making it ideal for high efficiency power management applications.
Specifications:
- Continuous Drain Current Id: 3.2 A
- Current Id Max: 3.2 A
- Drain Source Voltage Vds: 60 V
- Module Configuration: Dual
- Mounting Type: SMD
- Number of Pins: 8
- Number of Transistors: 2
- On Resistance Rds(on): 180 MOhm
- Operating Temperature Range: -55°C to +150°C
- Package / Case: SOIC
- Pin Configuration: 1(S1), 2(G1), 3(S2), 4(G2), 5+6(D2), 7+8(D1)
- Power Dissipation Pd: 2.1 W
- Pulse Current Idm: 13.7 A
- Rds(on) Test Voltage Vgs: 10 V
- SVHC: No SVHC (15-Dec-2010)
- Threshold Voltage Vgs Typ: 1 V
- Transistor Case Style: SOIC
- Transistor Polarity: N Channel
- Voltage Vds Typ: 60 V
- Voltage Vgs Rds on Measurement: 10 V
RoHS: Yes
Accessories:
- Electrolube - SMA10SL
- Roth Elektronik - RE932-01
- STANNOL - 574601