Datasheet SI4511DY-T1-E3 - Vishay DUAL N/P CHANNEL MOSFET, 20 V, SOIC — Ficha de datos

Part Number: SI4511DY-T1-E3
Descripción detallada
Manufacturer: Vishay
Description: DUAL N/P CHANNEL MOSFET, 20 V, SOIC
Specifications:
- Continuous Drain Current Id: 9.6 A
 - Drain Source Voltage Vds: 20 V
 - On Resistance Rds(on): 14.5 MOhm
 - Rds(on) Test Voltage Vgs: 10 V
 - Threshold Voltage Vgs Typ: 1.8 V
 - Transistor Polarity: N and P Channel
 
RoHS: Y-Ex
Otros nombres:
SI4511DYT1E3, SI4511DY T1 E3