Datasheet IRF5210SPbF, IRF5210LPbF (Infineon)

PD - 97049B IRF5210SPbF IRF5210LPbF HEXFET® Power MOSFET l Advanced Process Technology l Ultra Low On-Resistance D VDSS = -100V l 150°C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax RDS(on) = 60mΩ G l Some Parameters are Different from IRF5210S/L I S D = -38A l P-Channel l Lead-Free D D
Description
Features of this design are a 150°C junction operating temperature, fast switching speed and S S improved repetitive avalanche rating . These fea- D D tures combine to make this design an extremely G G efficient and reliable device for use in a wide D2Pak TO-262 variety of other applications. IRF5210SPbF IRF5210LPbF
G D S
Gate Drain Source
Absolute Maximum Ratings Parameter Max. Units
ID @ TC = 25°C Continuous Drain Current, VGS @ -10V -38 A ID @ TC = 100°C Continuous Drain Current, VGS @ -10V -24 IDM Pulsed Drain Current c -140 PD @TA = 25°C Maximum Power Dissipation 3.1 W PD @TC = 25°C Maximum Power Dissipation 170 Linear Derating Factor 1.3 W/°C VGS Gate-to-Source Voltage ± 20 V EAS Single Pulse Avalanche Energy d 120 mJ I Avalanche Current c AR -23 A E Repetitive Avalanche Energy AR c 17 mJ dv/dt Peak Diode Recovery dv/dt e -7.4 V/ns TJ Operating Junction and -55 to + 150 °C TSTG Storage Temperature Range Soldering Temperature, for 10 seconds 300 (1.6mm from case )
Thermal Resistance Parameter Typ. Max. Units
RθJC Junction-to-Case ––– 0.75 °C/W RθJA Junction-to-Ambient (PCB Mount, steady state) g ––– 40 www.irf.com 1 08/04/09