Datasheet PZT2907A (ON Semiconductor) - 3

FabricanteON Semiconductor
DescripciónPNP Bipolar Transistor
Páginas / Página4 / 3 — PZT2907A. Figure 1. Delay and Rise. Figure 2. Storage and Fall. Time Test …
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Formato / tamaño de archivoPDF / 105 Kb
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PZT2907A. Figure 1. Delay and Rise. Figure 2. Storage and Fall. Time Test Circuit. TYPICAL ELECTRICAL CHARACTERISTICS

PZT2907A Figure 1 Delay and Rise Figure 2 Storage and Fall Time Test Circuit TYPICAL ELECTRICAL CHARACTERISTICS

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PZT2907A
-30 V +15 V -6.0 V INPUT INPUT Z 200 1.0 k 37 o = 50 W Zo = 50 W PRF = 150 Hz PRF = 150 Hz RISE TIME ≤ 2.0 ns RISE TIME ≤ 2.0 ns 1.0 k TO OSCILLOSCOPE 1.0 k TO OSCILLOSCOPE 0 RISE TIME ≤ 5.0 ns 0 RISE TIME ≤ 5.0 ns -16 V 50 -30 V 50 1N916 200 ns 200 ns
Figure 1. Delay and Rise Figure 2. Storage and Fall Time Test Circuit Time Test Circuit TYPICAL ELECTRICAL CHARACTERISTICS
1000 1000 (MHz) TJ = 125°C GAIN TJ = 25°C 100 100 , CURRENT TJ = -55°C h FE ‐GAIN BANDWIDTH PRODUCT VCE = -20 V TJ = 25°C 10 , CURRENT 10 -0.1 -1.0 -10 -100 -1000 f T -1.0 -10 -100 -1000 IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA)
Figure 3. DC Current Gain Figure 4. Current Gain Bandwidth Product
-1.0 30 TJ = 25°C 20 -0.8 VBE(sat) @ IC/IB = 10 Ceb TS) -0.6 VBE(on) @ VCE = -10 V 10 ANCE (pF) 7.0 TAGE (VOL -0.4 ACIT C 5.0 cb VOL CAP -0.2 3.0 VCE(sat) @ IC/IB = 10 0 2.0 -0.1 -0.2 -0.5 -1.0 -2.0 -5.0 -10 -20 -50 -100 -200 -500 -0.1 -0.2 -0.3 -0.5 -0.7 -1.0 -2.0 -3.0 -5.0 -7.0 -10 -20 -30 IC, COLLECTOR CURRENT (mA) REVERSE VOLTAGE (VOLTS)
Figure 5. “ON” Voltage Figure 6. Capacitances http://onsemi.com 3