IGLD60R190D1600V CoolGaN™ enhancement-mode Power TransistorFigure 13Typ. transfer characteristicsFigure 14Typ. transfer characteristics 30 20 30 20 25 25 15 15 20 20 ))))AA(A 15 10 (A 15 10 (m(mI DI DI GI G 10 10 5 5 5 5 0 0 0 0 0 1 2 3 4 5 0 1 2 3 4 5 V(V)V(V)GSGS ID, IG =f(VGS); VDS = 8 V; Tj = 25 °C ID, IG =f(VGS); VDS = 8 V ; Tj = 125 °C Figure 15Typ. channel reverse characteristicsFigure 16Typ. channel reverse characteristicsV(V)V(V)DSDS-10-8-6-4-20-10-9-8-7-6-5-4-3-2-1000-1-1-2-2-3-3-4-4))-5(A-5(AI DI D-6-6 -5V -4V -2V V -5V -4V -3V -2V -1V 0V V -3V -1V 0V GS GS -7-7-8-8-9-9-10-10 VDS=f(ID, VGS); Tj = 25 °C VDS=f(ID, VGS); Tj = 125 °C
Final Data Sheet 10 Rev. 2.0 2018-11-09 Document Outline Features Benefits Applications Table of Contents 1 Maximum ratings 2 Thermal characteristics 3 Electrical characteristics 4 Electrical characteristics diagrams 5 Test Circuits 6 Package Outlines 7 Appendix A 8 Revision History