Datasheet DF2B6M4ASL (Toshiba) - 4

FabricanteToshiba
DescripciónESD Protection Diodes Silicon Epitaxial Planar
Páginas / Página9 / 4 — DF2B6M4ASL. 6.2. TLP. Characteristics. (Note). Note:. The. above. …
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DF2B6M4ASL. 6.2. TLP. Characteristics. (Note). Note:. The. above. characteristics. curves. are. presented. for. reference. only. and. not. guaranteed. by

DF2B6M4ASL 6.2 TLP Characteristics (Note) Note: The above characteristics curves are presented for reference only and not guaranteed by

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DF2B6M4ASL 6.2. TLP Characteristics (Note) Note: The above characteristics curves are presented for reference only and not guaranteed by production test, unless otherwise noted. 6.3. Clamp Voltage - Peak Pulse Current (VC - IPP) (Note) Fig. 6.3.1 VC - IPP Fig. 6.3.2 Based on IEC61000-4-5 8/20 µs pulse. Note: The above characteristics curves are presented for reference only and not guaranteed by production test, unless otherwise noted. ©2019 4 2019-08-05 Toshiba Electronic Devices & Storage Corporation Rev.1.0