Datasheet MMBT4401 (Diodes) - 5
| Fabricante | Diodes |
| Descripción | 40V NPN SMALL SIGNAL TRANSISTOR IN SOT23 |
| Páginas / Página | 7 / 5 — MMBT4401. www.diodes.com |
| Formato / tamaño de archivo | PDF / 264 Kb |
| Idioma del documento | Inglés |
MMBT4401. www.diodes.com
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MMBT4401
1,000 0.5 IC I = 10 B T = 125°C R 0.4 A E ) N T AI IT (V E T = 25°C G M G A T 100 -E R 0.3 EN O LTA R T = +25°C A T O R T = -25°C A C V T = 150°C A U E N C LL IO C O T 0.2 D C A R ) FE 10 T h, A TU (S SA CEV, 0.1 T = -50°C V = 1.0V A CE 1 0 0.1 1 10 100 1,000 1 10 100 1,000 I , COLLECTOR CURRENT (mA) I , COLLECTOR CURRENT (mA) C C Figure 1 Typical DC Current Gain vs. Collector Current Figure 2 Collector-Emitter Saturation Voltage vs. Col ector Current ) 1.0 100 V E ( G 0.9 V = 5V CE LTA O T = -50°C 0.8 A V 30 ) N F -O p 20 N 0.7 T = 25°C E ( Cibo R A C U N T 0.6 10 R ITA E C T A IT 0.5 P 5 M T = 150°C A A C -E 0.4 Cobo , BASE ) 0.3 ON BE( 1 V 0.20.1 1 10 100 0.1 1.0 10 50 I , COLLECTOR CURRENT (mA) V , REVERSE VOLTAGE (V) C R Figure 3 Typical Base-Emitter Turn-On Voltage Figure 4 Typical Capacitance Characteristics
vs. Collector Current 1,000 2.0 V = 5V ) I = 30mA CE V C z) 1.8 I = 1mA H E ( C G I = 10mA C (M 1.6 T C LTA I = 100mA C U O 1.4 D 100 V O R I = 300mA R E 1.2 C T P T H T MI 1.0 ID -E R DW O 0.8 N T 10 C E 0.6 BA N LL AI O 0.4 C G f, T CE 0.2 V, 1 0 1 10 100 0.001 0.01 0.1 1 10 100 I , COLLECTOR CURRENT (mA) C I , BASE CURRENT (mA) B Figure 5 Typical Gain Bandwidth Product vs. Collector Current Figure 6 Typical Col ector Saturation Region MMBT4401 5 of 7 November 2013 Document Number: DS30039 Rev. 17 - 2
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1,000 0.5 IC I = 10 B T = 125°C R 0.4 A E ) N T AI IT (V E T = 25°C G M G A T 100 -E R 0.3 EN O LTA R T = +25°C A T O R T = -25°C A C V T = 150°C A U E N C LL IO C O T 0.2 D C A R ) FE 10 T h, A TU (S SA CEV, 0.1 T = -50°C V = 1.0V A CE 1 0 0.1 1 10 100 1,000 1 10 100 1,000 I , COLLECTOR CURRENT (mA) I , COLLECTOR CURRENT (mA) C C Figure 1 Typical DC Current Gain vs. Collector Current Figure 2 Collector-Emitter Saturation Voltage vs. Col ector Current ) 1.0 100 V E ( G 0.9 V = 5V CE LTA O T = -50°C 0.8 A V 30 ) N F -O p 20 N 0.7 T = 25°C E ( Cibo R A C U N T 0.6 10 R ITA E C T A IT 0.5 P 5 M T = 150°C A A C -E 0.4 Cobo , BASE ) 0.3 ON BE( 1 V 0.20.1 1 10 100 0.1 1.0 10 50 I , COLLECTOR CURRENT (mA) V , REVERSE VOLTAGE (V) C R Figure 3 Typical Base-Emitter Turn-On Voltage Figure 4 Typical Capacitance Characteristics
vs. Collector Current 1,000 2.0 V = 5V ) I = 30mA CE V C z) 1.8 I = 1mA H E ( C G I = 10mA C (M 1.6 T C LTA I = 100mA C U O 1.4 D 100 V O R I = 300mA R E 1.2 C T P T H T MI 1.0 ID -E R DW O 0.8 N T 10 C E 0.6 BA N LL AI O 0.4 C G f, T CE 0.2 V, 1 0 1 10 100 0.001 0.01 0.1 1 10 100 I , COLLECTOR CURRENT (mA) C I , BASE CURRENT (mA) B Figure 5 Typical Gain Bandwidth Product vs. Collector Current Figure 6 Typical Col ector Saturation Region MMBT4401 5 of 7 November 2013 Document Number: DS30039 Rev. 17 - 2
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© Diodes Incorporated