Datasheet IRLZ34N (International Rectifier) - 4
| Fabricante | International Rectifier |
| Descripción | HEXFET Power MOSFET, VDSS = 55 V, RDS(on) = 0.035 Ω, ID = 30 A, TO-220AB |
| Páginas / Página | 9 / 4 — Fig 5. Fig 6. Fig 7. Fig 8 |
| Formato / tamaño de archivo | PDF / 112 Kb |
| Idioma del documento | Inglés |
Fig 5. Fig 6. Fig 7. Fig 8
Versión de texto del documento
IRLZ34N 1400 15 V G S = 0V , f = 1M H z I = D 16A C is = s C gs + C g d , C ds S H OR TE D ) 1200 C rs = s C g d V V = DS 44V C C o = s s C ds + C gd is s e ( 12 V = DS 28V ) 1000 F ltag p o e ( V e 9 800 rc u itanc o C o ss S pac 600 a -to- 6 te , C a C 400 G C rss , GS 3 V 200 FO R TEST CI R CU I T SEE FIG UR E 13 0 A 0 A 1 10 100 0 4 8 12 16 20 24 28 32 V D S , Drai n-to -So urce V oltag e (V) Q , T otal Ga te C harg e (nC ) G
Fig 5.
Typical Capacitance Vs.
Fig 6.
Typical Gate Charge Vs. Drain-to-Source Voltage Gate-to-Source Voltage 1 0 0 0 1000 OPE R ATIO N IN TH IS A RE A LI MI TE D ) BY R D S(o n) (A t n ) rre u A 1 0 0 t ( 100 C n in 10µ s ra rre u D T = 17 5°C J e C in rs e T = 2 5°C ra v J 1 00µs e D 1 0 10 D , R I , I SD 1m s T = 25 °C C T = 17 5°C J 10m s V G S = 0 V S ing le Pulse 1 A 1 A 0 . 4 0 . 6 0 . 8 1 . 0 1 . 2 1 . 4 1 . 6 1 . 8 2 . 0 1 10 100 V , S o urce-to -Drain Vo lta ge (V ) V , Dra in -to-So urce Vo ltag e (V) S D D S
Fig 7.
Typical Source-Drain Diode
Fig 8.
Maximum Safe Operating Area Forward Voltage
Fig 5.
Typical Capacitance Vs.
Fig 6.
Typical Gate Charge Vs. Drain-to-Source Voltage Gate-to-Source Voltage 1 0 0 0 1000 OPE R ATIO N IN TH IS A RE A LI MI TE D ) BY R D S(o n) (A t n ) rre u A 1 0 0 t ( 100 C n in 10µ s ra rre u D T = 17 5°C J e C in rs e T = 2 5°C ra v J 1 00µs e D 1 0 10 D , R I , I SD 1m s T = 25 °C C T = 17 5°C J 10m s V G S = 0 V S ing le Pulse 1 A 1 A 0 . 4 0 . 6 0 . 8 1 . 0 1 . 2 1 . 4 1 . 6 1 . 8 2 . 0 1 10 100 V , S o urce-to -Drain Vo lta ge (V ) V , Dra in -to-So urce Vo ltag e (V) S D D S
Fig 7.
Typical Source-Drain Diode
Fig 8.
Maximum Safe Operating Area Forward Voltage