Datasheet IRLZ34N (International Rectifier) - 5
| Fabricante | International Rectifier |
| Descripción | HEXFET Power MOSFET, VDSS = 55 V, RDS(on) = 0.035 Ω, ID = 30 A, TO-220AB |
| Páginas / Página | 9 / 5 — Fig 10a. Fig 9. Fig 10b. Fig 11 |
| Formato / tamaño de archivo | PDF / 112 Kb |
| Idioma del documento | Inglés |
Fig 10a. Fig 9. Fig 10b. Fig 11
Versión de texto del documento
IRLZ34N 40 RD VDS VGS D.U.T. 30 RG + -VDD 5.0V 20 Pulse Width ≤ 1 µs Duty Factor ≤ 0.1 % D
Fig 10a.
Switching Time Test Circuit I , Drain Current (A) 10 VDS 90% 0 25 50 75 100 125 150 175 T , Case Temperature ( C) ° C 10% VGS
Fig 9.
Maximum Drain Current Vs. td(on) tr td(off) tf Case Temperature
Fig 10b.
Switching Time Waveforms 10 thJC (Z ) D = 0.50 1 0.20 0.10 0.05 PDM 0.1 0.02 SINGLE PULSE 0.01 t1 (THERMAL RESPONSE) t2 Thermal Response Notes: 1. Duty factor D = t / t 1 2 2. Peak T J = P DM x Z thJC + TC 0.01 0.00001 0.0001 0.001 0.01 0.1 t , Rectangular Pulse Duration (sec) 1
Fig 11.
Maximum Effective Transient Thermal Impedance, Junction-to-Case
Fig 10a.
Switching Time Test Circuit I , Drain Current (A) 10 VDS 90% 0 25 50 75 100 125 150 175 T , Case Temperature ( C) ° C 10% VGS
Fig 9.
Maximum Drain Current Vs. td(on) tr td(off) tf Case Temperature
Fig 10b.
Switching Time Waveforms 10 thJC (Z ) D = 0.50 1 0.20 0.10 0.05 PDM 0.1 0.02 SINGLE PULSE 0.01 t1 (THERMAL RESPONSE) t2 Thermal Response Notes: 1. Duty factor D = t / t 1 2 2. Peak T J = P DM x Z thJC + TC 0.01 0.00001 0.0001 0.001 0.01 0.1 t , Rectangular Pulse Duration (sec) 1
Fig 11.
Maximum Effective Transient Thermal Impedance, Junction-to-Case