Datasheet BDW42G (NPN), BDW46G, BDW47G (PNP) (ON Semiconductor) - 5
| Fabricante | ON Semiconductor |
| Descripción | Darlington Complementary Silicon Power Transistors |
| Páginas / Página | 8 / 5 — BDW42G (NPN), BDW46G, BDW47G (PNP). BDW42 (NPN). BDW46, 47 (PNP). Figure … |
| Revisión | 17 |
| Formato / tamaño de archivo | PDF / 239 Kb |
| Idioma del documento | Inglés |
BDW42G (NPN), BDW46G, BDW47G (PNP). BDW42 (NPN). BDW46, 47 (PNP). Figure 9. DC Current Gain
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BDW42G (NPN), BDW46G, BDW47G (PNP) BDW42 (NPN) BDW46, 47 (PNP)
20,000 20,000 VCE = 3.0 V VCE = 3.0 V 10,000 10,000 7000 5000 GAIN T T J = 150°C GAIN 5000 J = 150°C 3000 3000 2000 25°C 2000 25°C , DC CURRENT 1000 , DC CURRENT 1000 FEh -55°C FE 500 h 700 -55°C 500 300 300 200 200 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 IC, COLLECTOR CURRENT (AMP) IC, COLLECTOR CURRENT (AMP)
Figure 9. DC Current Gain
3.0 TS) 3.0 TS) TJ = 25°C TJ = 25°C 2.6 TAGE (VOL 2.6 IC = 2.0 A 4.0 A 6.0 A TAGE (VOL IC = 2.0 A 4.0 A 6.0 A 2.2 2.2 1.8 OR-EMITTER VOL 1.8 OR-EMITTER VOL 1.4 1.4 , COLLECT , COLLECT CEV 1.0 CE 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 V 1.00.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 IB, BASE CURRENT (mA) IB, BASE CURRENT (mA)
Figure 10. Collector Saturation Region
3.0 3.0 T T J = 25°C J = 25°C 2.5 2.5 TS) TS) 2.0 2.0 TAGE (VOL TAGE (VOL VBE(sat) @ IC/IB = 250 , VOL 1.5 , VOL 1.5 VBE @ VCE = 4.0 V V V VBE @ VCE = 4.0 V VBE(sat) @ IC/IB = 250 1.0 1.0 VCE(sat) @ IC/IB = 250 VCE(sat) @ IC/IB = 250 0.5 0.5 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 IC, COLLECTOR CURRENT (AMP) IC, COLLECTOR CURRENT (AMP)
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20,000 20,000 VCE = 3.0 V VCE = 3.0 V 10,000 10,000 7000 5000 GAIN T T J = 150°C GAIN 5000 J = 150°C 3000 3000 2000 25°C 2000 25°C , DC CURRENT 1000 , DC CURRENT 1000 FEh -55°C FE 500 h 700 -55°C 500 300 300 200 200 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 IC, COLLECTOR CURRENT (AMP) IC, COLLECTOR CURRENT (AMP)
Figure 9. DC Current Gain
3.0 TS) 3.0 TS) TJ = 25°C TJ = 25°C 2.6 TAGE (VOL 2.6 IC = 2.0 A 4.0 A 6.0 A TAGE (VOL IC = 2.0 A 4.0 A 6.0 A 2.2 2.2 1.8 OR-EMITTER VOL 1.8 OR-EMITTER VOL 1.4 1.4 , COLLECT , COLLECT CEV 1.0 CE 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 V 1.00.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 IB, BASE CURRENT (mA) IB, BASE CURRENT (mA)
Figure 10. Collector Saturation Region
3.0 3.0 T T J = 25°C J = 25°C 2.5 2.5 TS) TS) 2.0 2.0 TAGE (VOL TAGE (VOL VBE(sat) @ IC/IB = 250 , VOL 1.5 , VOL 1.5 VBE @ VCE = 4.0 V V V VBE @ VCE = 4.0 V VBE(sat) @ IC/IB = 250 1.0 1.0 VCE(sat) @ IC/IB = 250 VCE(sat) @ IC/IB = 250 0.5 0.5 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 IC, COLLECTOR CURRENT (AMP) IC, COLLECTOR CURRENT (AMP)
Figure 11. “On” Voltages www.onsemi.com 5