Datasheet CBR1-D010 (Central Semiconductor)
| Fabricante | Central Semiconductor |
| Descripción | SILICON BRIDGE RECTIFIER 1 AMP, 100 THRU 1000 VOLTS |
| Páginas / Página | 3 / 1 — CBR1-D010 SERIES. w w w. c e n t r a l s e m i . c o m. SILICON BRIDGE … |
| Formato / tamaño de archivo | PDF / 430 Kb |
| Idioma del documento | Inglés |
CBR1-D010 SERIES. w w w. c e n t r a l s e m i . c o m. SILICON BRIDGE RECTIFIER. DESCRIPTION:. 1 AMP, 100 THRU 1000 VOLTS. NOTE:
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CBR1-D010 SERIES w w w. c e n t r a l s e m i . c o m SILICON BRIDGE RECTIFIER DESCRIPTION: 1 AMP, 100 THRU 1000 VOLTS
The CENTRAL SEMICONDUCTOR CBR1-D010 series types are full wave silicon bridge rectifiers mounted in a durable epoxy molded case. These devices are ideal for printed circuit board mounting and fit into a standard DIP socket (0.1”/2.54mm spacing).
NOTE:
Also available in fast recovery. Please contact factory for details.
MARKING: FULL PART NUMBER DIP CASE MAXIMUM RATINGS:
(TA=25°C unless otherwise noted))
CBR1 CBR1 CBR1 CBR1 CBR1 CBR1 SYMBOL -D010 -D020 -D040 -D060 -D080 -D100 UNITS
Peak Repetitive Reverse Voltage
VRRM
100
200
400
600
800 1000 V DC Blocking Voltage VR 100
200
400
600
800 1000 V RMS Reverse Voltage VR(RMS) 70 140 280 420 560 700 V Average Forward Current (TA=50°C) IO 1.0 A Peak Forward Surge Current IFSM 50 A Operating and Storage Junction Temperature TJ, Tstg -65 to +150 °C
ELECTRICAL CHARACTERISTICS PER DIODE:
(TA=25°C unless otherwise noted)
SYMBOL TEST CONDITIONS MIN MAX UNITS
IR VR=Rated VRRM 10 μA VF IF=1.0A 1.1 V R3 (11-June 2012)
The CENTRAL SEMICONDUCTOR CBR1-D010 series types are full wave silicon bridge rectifiers mounted in a durable epoxy molded case. These devices are ideal for printed circuit board mounting and fit into a standard DIP socket (0.1”/2.54mm spacing).
NOTE:
Also available in fast recovery. Please contact factory for details.
MARKING: FULL PART NUMBER DIP CASE MAXIMUM RATINGS:
(TA=25°C unless otherwise noted))
CBR1 CBR1 CBR1 CBR1 CBR1 CBR1 SYMBOL -D010 -D020 -D040 -D060 -D080 -D100 UNITS
Peak Repetitive Reverse Voltage
VRRM
100
200
400
600
800 1000 V DC Blocking Voltage VR 100
200
400
600
800 1000 V RMS Reverse Voltage VR(RMS) 70 140 280 420 560 700 V Average Forward Current (TA=50°C) IO 1.0 A Peak Forward Surge Current IFSM 50 A Operating and Storage Junction Temperature TJ, Tstg -65 to +150 °C
ELECTRICAL CHARACTERISTICS PER DIODE:
(TA=25°C unless otherwise noted)
SYMBOL TEST CONDITIONS MIN MAX UNITS
IR VR=Rated VRRM 10 μA VF IF=1.0A 1.1 V R3 (11-June 2012)