Datasheet ZTX849 (Diodes) - 3
| Fabricante | Diodes |
| Descripción | NPN Silicon Planar Medium Power High Current Transistor |
| Páginas / Página | 3 / 3 — TYPICAL CHARACTERISTICS. VCE(sat) v IC. hFE v IC. VBE(sat) v IC. VBE(on) … |
| Formato / tamaño de archivo | PDF / 68 Kb |
| Idioma del documento | Inglés |
TYPICAL CHARACTERISTICS. VCE(sat) v IC. hFE v IC. VBE(sat) v IC. VBE(on) v IC. Safe Operating Area
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ZTX849
TYPICAL CHARACTERISTICS
0.8 1.6 300 1.4 ni olts) 0.6 1.2 l Gain a - (V Ga 1.0 200 ) ic t a 0.4 0.8 ised yp (s l IC/IB=10 VCE=5V - T CE IC/IB=50 0.6 VCE=1V V 100 FE h 0.2 0.4 - Norma E 0.2 F h 0 0 0.01 0.1 100 0.01 0.1 1 10 1 10 100 IC - Collector Current (Amps) IC - Collector Current (Amps)
VCE(sat) v IC hFE v IC
VCE=1V 2.0 2.0 olts) olts) 1.5 1.5 V - (V IC/IB=10 ) IC/IB=50 - ( E at B s( V 1.0 1.0 BE V 0.5 0.5 0.001 0.01 0.1 1 10 100 0.001 0.01 0.1 1 10 100 IC - Collector Current (Amps) IC - Collector Current (Amps)
VBE(sat) v IC VBE(on) v IC
Single Pulse Test at Tamb=25°C 100 ps) Am ( nt 10 re r Cur to c D.C. lle 1s 1 100ms 10ms - Co 1.0ms IC 0.1ms 0.1 0.1 1 10 100 VCE - Collector Voltage (Volts)
Safe Operating Area
3-293
TYPICAL CHARACTERISTICS
0.8 1.6 300 1.4 ni olts) 0.6 1.2 l Gain a - (V Ga 1.0 200 ) ic t a 0.4 0.8 ised yp (s l IC/IB=10 VCE=5V - T CE IC/IB=50 0.6 VCE=1V V 100 FE h 0.2 0.4 - Norma E 0.2 F h 0 0 0.01 0.1 100 0.01 0.1 1 10 1 10 100 IC - Collector Current (Amps) IC - Collector Current (Amps)
VCE(sat) v IC hFE v IC
VCE=1V 2.0 2.0 olts) olts) 1.5 1.5 V - (V IC/IB=10 ) IC/IB=50 - ( E at B s( V 1.0 1.0 BE V 0.5 0.5 0.001 0.01 0.1 1 10 100 0.001 0.01 0.1 1 10 100 IC - Collector Current (Amps) IC - Collector Current (Amps)
VBE(sat) v IC VBE(on) v IC
Single Pulse Test at Tamb=25°C 100 ps) Am ( nt 10 re r Cur to c D.C. lle 1s 1 100ms 10ms - Co 1.0ms IC 0.1ms 0.1 0.1 1 10 100 VCE - Collector Voltage (Volts)
Safe Operating Area
3-293