Datasheet TDS5B212MX (Toshiba) - 5

TDS5B212MX,TDS5C212MX 12. Electrical Characteristics 12.1. DC Characteristics 12.1.1. DC Characteristics (Note) (Unless otherwise specified, Ta = -40 to 85 �) Characteristics Symbol Test Condition VCC (V) Min Typ. Max Unit High-level input voltage (OE, SEL) VIH � 1.65 to 3.6 0.65 × VCC � � V Low-level input voltage (OE, SEL) VIL � 1.65 to 3.6 � � 0.35 × VCC V Input leakage current (OE, SEL) IIN VIN = 0 to 3.6 V 1.65 to 3.6 � � ±1 µA Switch OFF-state leakage current ISZ VS = 0 to 2.0V, 3.6 � � ±1 µA OE = VCC ON-resistance RON VS = 0 V, IS = 8 mA 3.0 � � 8.5 Ω VS = 2 V, IS = 8 mA 3.0 � � 10 Current consumption Iope VS = 0 V, 3.6 � 70 150 µA OE = VCC or GND VS = 2 V, 3.6 � 140 300 OE = VCC or GND Note : All typical values are at Ta = 25 �. 12.1.2. DC Characteristics (Note) (Unless otherwise specified, Ta = -40 to 125 �) Characteristics Symbol Test Condition VCC (V) Min Typ. Max Unit High-level input voltage (OE, SEL) VIH � 1.65 to 3.6 0.65 × VCC � � V Low-level input voltage (OE, SEL) VIL � 1.65 to 3.6 � � 0.35 × VCC V Input leakage current (OE, SEL) IIN VIN = 0 to 3.6 V 1.65 to 3.6 � � ±1 µA Switch OFF-state leakage current ISZ VS = 0 to 2.0 V, 1.65 to 3.6 � � ±1 µA OE = VCC ON-resistance RON VS = 0 V, IS = 8 mA 3.0 � � 9.0 Ω VS = 2 V, IS = 8 mA 3.0 � � 12 Current consumption Iope VS = 0 V, 3.6 � 70 150 µA OE = VCC or GND VS = 2 V, 3.6 � 140 300 OE = VCC or GND Note: All typical values are at Ta = 25 �. ©2026 5 Toshiba Electronic Devices & Storage Corporation 2026-04-21 Rev.1.0.A