Datasheet JX3S0020120M (JX Semiconductor) - 2

JX3S0040120MC 电特性 Electrical Characteristics (TC=25 unless otherwise noted) 参数 符号 条件 数值 Value 单位 Parameter Symbol Condition Unit Min Typ. Max
漏极-源极阻断电压 Drain-Source Breakdown Voltage V(BR)DSS VGS=0V, ID=100μA 1200 V 栅极阈值电压 Tvj=25℃ 2 2.9 4 Gate Threshold Voltage VGS(th) VDS=VGS, ID=10mA V Tvj=150℃ 2.1 零栅压漏极电流 Zero Gate Voltage Drain Current IDSS VDS=1200V, VGS=0V 1 100 μA 栅极-源极漏电流 Gate-Source Leakage Current IGSS VGS=18V, VDS=0V 250 nA 漏极-源极导通电阻 Tvj=25℃ 43 53 Drain-Source On-State Resistance RDS(on) VGS=18V, ID=40A mΩ Tvj=150℃ 57 跨导 Tvj=25℃ 21.2 Transconductance gfs VDS=20V, IDS=40A S Tvj=150℃ 20.4 输入电容 Input Capacitance Ciss 3360 输出电容 VGS=0V pF Output Capacitance Coss 140 VDS=1000V 反向传输电容 f=100KHz Reverse Transfer Capacitance Crss V 12 AC=25mV 输出电容存储能量 E C oss 138 μJ oss Stored Energy 单脉冲雪崩能量 Avalanche Energy, Single Pluse EAS ID=40A, VDD=50V 2 J 开通能量 Turn-On Switching Energy EON V 2 DS=800V, VGS=-5/18V ID=40A, RG(ext)=2.5Ω, mJ 关断能量 TJ=25℃, L=150μH Turn Off Switching Energy EOFF 0.3 开通延迟时间 Turn-On Delay Time td(on) 18 上升时间 VDS=800V, VGS=-5/18V Rise Time tr 67 ID=40A, RG(ext)=2.5Ω, 关断延迟时间 T ns J=25℃, L=150μH Timing relative to V Turn-Off Delay Time td(off) 22 DS 下降时间 Fal Time tf 13 栅源电荷 Gate to Source Charge Qgs 47 栅漏电荷 VDS=800V, VGS=-5/18V Gate to Drain Charge Qgd 39 I nC D=40A 栅极总电荷 Total Gate Charge Qg 136 Document Outline 特点 Features