Datasheet BA157G - Taiwan Semiconductor DIODE, FAST, 1 A — Ficha de datos

Taiwan Semiconductor BA157G

Part Number: BA157G

Descripción detallada

Manufacturer: Taiwan Semiconductor

Description: DIODE, FAST, 1 A

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Docket:
BA157 THRU BA159
1.0 AMP.

Fast Recovery Rectifiers
Voltage Range 400 to 1000 Volts Current 1.0 Ampere
Features
a a a Low forward voltage drop High current capability High reliability High surge current capability

Specifications:

  • Approval Bodies: UL 94V-0
  • Case Temperature Tc @ If: 25°C
  • Current If @ Vf: 1 A
  • Current Ifrm: 1 A
  • Current Ifsm: 30 A
  • Current Ir Max: 1 A
  • Device Marking: BA157G
  • Diode Type: Fast Recovery
  • External Depth: 2.7 mm
  • External Diameter: 2.7 mm
  • External Length / Height: 5.2 mm
  • External Width: 2.7 mm
  • Forward Current If Max: 1 mA
  • Forward Current If(AV): 1 A
  • Forward Surge Current Ifsm Max: 30 A
  • Forward Voltage VF Max: 1.2 V
  • Forward Voltage: 1.2 V
  • Junction Temperature Tj Max: 150°C
  • Junction Temperature Tj Min: -65°C
  • Mounting Type: Axial Leaded
  • Number of Pins: 2
  • Operating Temperature Range: -65°C to +150°C
  • Package / Case: DO-41
  • Repetitive Reverse Voltage Vrrm Max: 400 V
  • Reverse Recovery Time trr Max: 150 ns
  • SVHC: No SVHC (15-Dec-2010)
  • Weight: 0.0003kg

RoHS: Yes

Accessories:

  • Multicomp - BA157