Datasheet NGB8207BNT4G - ON Semiconductor IGBT, IGNITION, N-CH, 365 V, 20 A, D2PAK — Ficha de datos

ON Semiconductor NGB8207BNT4G

Part Number: NGB8207BNT4G

Descripción detallada

Manufacturer: ON Semiconductor

Description: IGBT, IGNITION, N-CH, 365 V, 20 A, D2PAK

data sheetDownload Data Sheet

Docket:
NGB8207N, NGB8207BN Ignition IGBT
20 A, 365 V, N-Channel D2PAK
This Logic Level Insulated Gate Bipolar Transistor (IGBT) features monolithic circuitry integrating ESD and Overvoltage clamped protection for use in inductive coil drivers applications.

Primary uses include Ignition, Direct Fuel Injection, or wherever high voltage and high current switching is required.
Features
http://onsemi.com

Specifications:

  • Collector Emitter Voltage V(br)ceo: 365 V
  • Collector Emitter Voltage Vces: 1.5 V
  • DC Collector Current: 20 A
  • Number of Pins: 3
  • Operating Temperature Range: -55°C to +175°C
  • Power Dissipation: 165 W
  • Transistor Case Style: TO-263
  • Transistor Type: IGBT
  • RoHS: Yes
  • SVHC: No SVHC (18-Jun-2012)