Datasheet Texas Instruments UC1708J — Ficha de datos

FabricanteTexas Instruments
SerieUC1708
Numero de parteUC1708J
Datasheet Texas Instruments UC1708J

Controladores de potencia de alta velocidad sin inversión 8-CDIP -55 a 125

Hojas de datos

Dual Non-Inverting Power Driver datasheet
PDF, 1.9 Mb, Revisión: C, Archivo publicado: sept 25, 2007
Extracto del documento

Precios

Estado

Estado del ciclo de vidaActivo (Recomendado para nuevos diseños)
Disponibilidad de muestra del fabricanteNo

Embalaje

Pin8
Package TypeJG
Industry STD TermCDIP
JEDEC CodeR-GDIP-T
Package QTY1
CarrierTUBE
Device MarkingUC1708J
Width (mm)6.67
Length (mm)9.6
Thickness (mm)4.57
Pitch (mm)2.54
Max Height (mm)5.08
Mechanical DataDescargar

Paramétricos

Fall Time25 ns
Input ThresholdCMOS,TTL
Input VCC(Max)35 V
Input VCC(Min)5 V
Number of Channels2
Operating Temperature Range-55 to 125 C
Package GroupCDIP
Peak Output Current3 A
Power SwitchMOSFET
Prop Delay25 ns
RatingMilitary
Rise Time25 ns
Special FeaturesEnable Pin,Shutdown,Thermal Shutdown

Plan ecológico

RoHSSee ti.com

Notas de aplicación

  • DN-35 IGBT Drive Using MOSFET Gate Drivers
    PDF, 54 Kb, Archivo publicado: sept 5, 1999
    The UC1708 family of power drivers is made with a high-speed high-voltage Schottky process to interface control functions and high-power switching devices-particularly power MOSFETs. The UC1724 family of Isolated Drive Transmitters along with the UC1725 Isolated Drivers provides a unique solution to driving isolated power MOSFET gates. They are particularly suited to drive the high-side devices
  • U-118 New Driver ICs Optimize High-Speed Power MOSFET Switching Characteristics
    PDF, 573 Kb, Archivo publicado: sept 5, 1999
    The UC3705 family of power drivers is made with a high speed Schottky process to interface between low-level control functions and high-power switching devices particularly power MOSFETs. These devices are also an optimum choice for capacitive line drivers where up to 1.5 amps may be switched in either direction. With both inverting and non-inverting inputs available logic signals of either pola
  • U-137 Practical Considerations in High Performance MOSFET IGBT and MCT Gate
    PDF, 244 Kb, Archivo publicado: sept 5, 1999
    The switch-mode power supply industry's trend towards higher conversion frequencies is justified by the dramatic improvement in obtaining higher power densities. And as these frequencies are pushed towards and beyond one MHz the MOSFET transition periods can become a significant portion of the total switching period. Losses associated with the overlap of switch voltage and current not only degrad

Linea modelo

Clasificación del fabricante

  • Semiconductors > Space & High Reliability > Power Management Products > MOSFET and IGBT Gate Driver