Datasheet Texas Instruments LF347-N — Ficha de datos

FabricanteTexas Instruments
SerieLF347-N
Datasheet Texas Instruments LF347-N

Amplificadores de entrada de ancho de banda amplio JFET Amplificadores operacionales

Hojas de datos

LF147/LF347 Wide Bandwidth Quad JFET Input Operational Amplifiers datasheet
PDF, 1.7 Mb, Revisión: D, Archivo publicado: marzo 25, 2013
Extracto del documento

Precios

Estado

LF347BN/NOPBLF347MLF347M/NOPBLF347MXLF347MX/NOPBLF347N/NOPB
Estado del ciclo de vidaActivo (Recomendado para nuevos diseños)NRND (No recomendado para nuevos diseños)Activo (Recomendado para nuevos diseños)NRND (No recomendado para nuevos diseños)Activo (Recomendado para nuevos diseños)Activo (Recomendado para nuevos diseños)
Disponibilidad de muestra del fabricanteNoNoNo

Embalaje

LF347BN/NOPBLF347MLF347M/NOPBLF347MXLF347MX/NOPBLF347N/NOPB
N123456
Pin141414141414
Package TypeNFFDDDDNFF
Industry STD TermPDIPSOICSOICSOICSOICPDIP
JEDEC CodeR-PDIP-TR-PDSO-GR-PDSO-GR-PDSO-GR-PDSO-GR-PDIP-T
Package QTY2555552500250025
CarrierTUBETUBETUBELARGE T&RLARGE T&RTUBE
Device MarkingLF347BNLF347MLF347MLF347MLF347MLF347N
Width (mm)6.353.913.913.913.916.35
Length (mm)19.1778.658.658.658.6519.177
Thickness (mm)3.4291.581.581.581.583.429
Pitch (mm)2.541.271.271.271.272.54
Max Height (mm)5.331.751.751.751.755.33
Mechanical DataDescargarDescargarDescargarDescargarDescargarDescargar

Paramétricos

Parameters / ModelsLF347BN/NOPB
LF347BN/NOPB
LF347M
LF347M
LF347M/NOPB
LF347M/NOPB
LF347MX
LF347MX
LF347MX/NOPB
LF347MX/NOPB
LF347N/NOPB
LF347N/NOPB
Additional FeaturesN/AN/AN/AN/AN/AN/A
ArchitectureFETFETFETFETFETFET
CMRR(Min), dB707070707070
CMRR(Typ), dB100100100100100100
GBW(Typ), MHz444444
Input Bias Current(Max), pA200200200200200200
Iq per channel(Max), mA2.752.752.752.752.752.75
Iq per channel(Typ), mA1.81.81.81.81.81.8
Number of Channels444444
Offset Drift(Typ), uV/C101010101010
Operating Temperature Range, C0 to 700 to 700 to 700 to 700 to 700 to 70
Output Current(Typ), mA313131313131
Package GroupPDIPSOICSOICSOICSOICPDIP
Package Size: mm2:W x L, PKGSee datasheet (PDIP)14SOIC: 52 mm2: 6 x 8.65(SOIC)14SOIC: 52 mm2: 6 x 8.65(SOIC)14SOIC: 52 mm2: 6 x 8.65(SOIC)14SOIC: 52 mm2: 6 x 8.65(SOIC)See datasheet (PDIP)
Rail-to-RailIn to V+In to V+In to V+In to V+In to V+In to V+
RatingCatalogCatalogCatalogCatalogCatalogCatalog
Slew Rate(Typ), V/us131313131313
Total Supply Voltage(Max), +5V=5, +/-5V=10363636363636
Total Supply Voltage(Min), +5V=5, +/-5V=10888888
Vn at 1kHz(Typ), nV/rtHz202020202020
Vos (Offset Voltage @ 25C)(Max), mV555555

Plan ecológico

LF347BN/NOPBLF347MLF347M/NOPBLF347MXLF347MX/NOPBLF347N/NOPB
RoHSObedienteSee ti.comObedienteSee ti.comObedienteObediente

Notas de aplicación

  • AN-447 Protection Schemes for BI-FET Amplifiers and Switches
    PDF, 80 Kb, Archivo publicado: mayo 2, 2004
    Application Note 447 Protection Schemes for BI-FET Amplifiers and Switches
  • AN-301 Signal Conditioning for Sophisticated Transducers (Rev. B)
    PDF, 1.2 Mb, Revisión: B, Archivo publicado: mayo 6, 2013
    This application note discusses signal conditioning and applications information for a diverse group ofsophisticated and unusual transducers.
  • AN-256 Circuitry for Inexpensive Relative Humidity Measurement (Rev. B)
    PDF, 262 Kb, Revisión: B, Archivo publicado: mayo 6, 2013
    Of all common environmental parameters humidity is perhaps the least understood and most difficult tomeasure. The most common electronic humidity detection methods albeit highly accurate are not obviousand tend to be expensive and complex (See Box). Accurate humidity measurement is vital to a number ofdiverse areas including food processing paper and lumber production pollution monitor
  • AN-263 Sine Wave Generation Techniques (Rev. C)
    PDF, 747 Kb, Revisión: C, Archivo publicado: abr 22, 2013
    This application note describes the sine wave generation techniques to control frequency amplitude anddistortion levels.
  • AN-262 Applying Dual and Quad FET Op Amps (Rev. B)
    PDF, 1.1 Mb, Revisión: B, Archivo publicado: mayo 6, 2013
    The availability of dual and quad packaged FET op amps offers the designer all the traditional capabilitiesof FET op amps including low bias current and speed and some additional advantages. The cost-peramplifieris lower because of reduced package costs. This means that more amplifiers are available toimplement a function at a given cost making design easier. At the same time the availab
  • Get More Power Out of Dual or Quad Op-Amps
    PDF, 91 Kb, Archivo publicado: oct 2, 2002

Linea modelo

Clasificación del fabricante

  • Semiconductors> Amplifiers> Operational Amplifiers (Op Amps)> General-Purpose Op Amps