Datasheet Texas Instruments LF353-N — Ficha de datos
| Fabricante | Texas Instruments |
| Serie | LF353-N |
Amplificador de ancho de banda de doble entrada JFET Amplificador operacional
Hojas de datos
LF353 Wide Bandwidth Dual JFET Input Operational Amplifier datasheet
PDF, 1.0 Mb, Revisión: F, Archivo publicado: marzo 25, 2013
Extracto del documento
Precios
Estado
| LF353M | LF353M/NOPB | LF353MX | LF353MX/NOPB | LF353N/NOPB | |
|---|---|---|---|---|---|
| Estado del ciclo de vida | NRND (No recomendado para nuevos diseños) | Activo (Recomendado para nuevos diseños) | NRND (No recomendado para nuevos diseños) | Activo (Recomendado para nuevos diseños) | Activo (Recomendado para nuevos diseños) |
| Disponibilidad de muestra del fabricante | Sí | No | Sí | No | Sí |
Embalaje
| LF353M | LF353M/NOPB | LF353MX | LF353MX/NOPB | LF353N/NOPB | |
|---|---|---|---|---|---|
| N | 1 | 2 | 3 | 4 | 5 |
| Pin | 8 | 8 | 8 | 8 | 8 |
| Package Type | D | D | D | D | P |
| Industry STD Term | SOIC | SOIC | SOIC | SOIC | PDIP |
| JEDEC Code | R-PDSO-G | R-PDSO-G | R-PDSO-G | R-PDSO-G | R-PDIP-T |
| Package QTY | 95 | 95 | 2500 | 2500 | 40 |
| Carrier | TUBE | TUBE | LARGE T&R | LARGE T&R | TUBE |
| Device Marking | LF353 | M | LF353 | LF353 | LF |
| Width (mm) | 3.91 | 3.91 | 3.91 | 3.91 | 6.35 |
| Length (mm) | 4.9 | 4.9 | 4.9 | 4.9 | 9.81 |
| Thickness (mm) | 1.58 | 1.58 | 1.58 | 1.58 | 3.9 |
| Pitch (mm) | 1.27 | 1.27 | 1.27 | 1.27 | 2.54 |
| Max Height (mm) | 1.75 | 1.75 | 1.75 | 1.75 | 5.08 |
| Mechanical Data | Descargar | Descargar | Descargar | Descargar | Descargar |
Paramétricos
| Parameters / Models | LF353M | LF353M/NOPB | LF353MX | LF353MX/NOPB | LF353N/NOPB |
|---|---|---|---|---|---|
| Additional Features | N/A | N/A | N/A | N/A | N/A |
| Architecture | FET | FET | FET | FET | FET |
| CMRR(Min), dB | 70 | 70 | 70 | 70 | 70 |
| CMRR(Typ), dB | 100 | 100 | 100 | 100 | 100 |
| GBW(Typ), MHz | 4 | 4 | 4 | 4 | 4 |
| Input Bias Current(Max), pA | 200 | 200 | 200 | 200 | 200 |
| Iq per channel(Max), mA | 3.25 | 3.25 | 3.25 | 3.25 | 3.25 |
| Iq per channel(Typ), mA | 1.8 | 1.8 | 1.8 | 1.8 | 1.8 |
| Number of Channels | 2 | 2 | 2 | 2 | 2 |
| Offset Drift(Typ), uV/C | 10 | 10 | 10 | 10 | 10 |
| Operating Temperature Range, C | 0 to 70 | 0 to 70 | 0 to 70 | 0 to 70 | 0 to 70 |
| Output Current(Typ), mA | 20 | 20 | 20 | 20 | 20 |
| Package Group | SOIC | SOIC | SOIC | SOIC | PDIP |
| Package Size: mm2:W x L, PKG | 8SOIC: 29 mm2: 6 x 4.9(SOIC) | 8SOIC: 29 mm2: 6 x 4.9(SOIC) | 8SOIC: 29 mm2: 6 x 4.9(SOIC) | 8SOIC: 29 mm2: 6 x 4.9(SOIC) | See datasheet (PDIP) |
| Rail-to-Rail | In to V+ | In to V+ | In to V+ | In to V+ | In to V+ |
| Rating | Catalog | Catalog | Catalog | Catalog | Catalog |
| Slew Rate(Typ), V/us | 13 | 13 | 13 | 13 | 13 |
| Total Supply Voltage(Max), +5V=5, +/-5V=10 | 36 | 36 | 36 | 36 | 36 |
| Total Supply Voltage(Min), +5V=5, +/-5V=10 | 10 | 10 | 10 | 10 | 10 |
| Vn at 1kHz(Typ), nV/rtHz | 16 | 16 | 16 | 16 | 16 |
| Vos (Offset Voltage @ 25C)(Max), mV | 10 | 10 | 10 | 10 | 10 |
Plan ecológico
| LF353M | LF353M/NOPB | LF353MX | LF353MX/NOPB | LF353N/NOPB | |
|---|---|---|---|---|---|
| RoHS | See ti.com | Obediente | See ti.com | Obediente | Obediente |
Notas de aplicación
- AN-447 Protection Schemes for BI-FET Amplifiers and SwitchesPDF, 80 Kb, Archivo publicado: mayo 2, 2004
Application Note 447 Protection Schemes for BI-FET Amplifiers and Switches - AN-262 Applying Dual and Quad FET Op Amps (Rev. B)PDF, 1.1 Mb, Revisión: B, Archivo publicado: mayo 6, 2013
The availability of dual and quad packaged FET op amps offers the designer all the traditional capabilitiesof FET op amps including low bias current and speed and some additional advantages. The cost-peramplifieris lower because of reduced package costs. This means that more amplifiers are available toimplement a function at a given cost making design easier. At the same time the availab - AN-263 Sine Wave Generation Techniques (Rev. C)PDF, 747 Kb, Revisión: C, Archivo publicado: abr 22, 2013
This application note describes the sine wave generation techniques to control frequency amplitude anddistortion levels. - AN-256 Circuitry for Inexpensive Relative Humidity Measurement (Rev. B)PDF, 262 Kb, Revisión: B, Archivo publicado: mayo 6, 2013
Of all common environmental parameters humidity is perhaps the least understood and most difficult tomeasure. The most common electronic humidity detection methods albeit highly accurate are not obviousand tend to be expensive and complex (See Box). Accurate humidity measurement is vital to a number ofdiverse areas including food processing paper and lumber production pollution monitor - Get More Power Out of Dual or Quad Op-AmpsPDF, 91 Kb, Archivo publicado: oct 2, 2002
Linea modelo
Serie: LF353-N (5)
Clasificación del fabricante
- Semiconductors> Amplifiers> Operational Amplifiers (Op Amps)> General-Purpose Op Amps