Datasheet Texas Instruments LFC789D25 — Ficha de datos
| Fabricante | Texas Instruments |
| Serie | LFC789D25 |
Controlador FET lineal dual
Hojas de datos
LFC789D25 datasheet
PDF, 526 Kb, Revisión: B, Archivo publicado: sept 17, 2004
Extracto del documento
Precios
Estado
| LFC789D25CDR | |
|---|---|
| Estado del ciclo de vida | Activo (Recomendado para nuevos diseños) |
| Disponibilidad de muestra del fabricante | No |
Embalaje
| LFC789D25CDR | |
|---|---|
| N | 1 |
| Pin | 8 |
| Package Type | D |
| Industry STD Term | SOIC |
| JEDEC Code | R-PDSO-G |
| Package QTY | 2500 |
| Carrier | LARGE T&R |
| Device Marking | KADAC |
| Width (mm) | 3.91 |
| Length (mm) | 4.9 |
| Thickness (mm) | 1.58 |
| Pitch (mm) | 1.27 |
| Max Height (mm) | 1.75 |
| Mechanical Data | Descargar |
Paramétricos
| Parameters / Models | LFC789D25CDR |
|---|---|
| Fixed Output Options, V | 2.5 |
| Iq(Typ), mA | 2 |
| Operating Temperature Range, C | 0 to 70 |
| Output Options | Fixed Output |
| Package Group | SOIC |
| Package Size: mm2:W x L, PKG | 8SOIC: 29 mm2: 6 x 4.9(SOIC) |
| Rating | Catalog |
| Thermal Resistance ОёJA, В°C/W | 97 |
| Vin(Max), V | 16 |
| Vin(Min), V | 9 |
| Vout(Max), V | 2.5 |
| Vout(Min), V | 2.5 |
Plan ecológico
| LFC789D25CDR | |
|---|---|
| RoHS | Obediente |
Notas de aplicación
- LDO PSRR Measurement Simplified (Rev. A)PDF, 131 Kb, Revisión: A, Archivo publicado: agosto 9, 2017
This applicationreportexplainsdifferentmethodsof measuringthe PowerSupplyRejectionRatio(PSRR)of a Low-Dropout(LDO)regulatorand includesthe prosand consof thesemeasuringmethods - LDO Noise Demystified (Rev. A)PDF, 785 Kb, Revisión: A, Archivo publicado: agosto 9, 2017
Thisapplicationreportexplainsthe differencebetweennoiseand PSRRof an LDO.It also explainsthedifferentwaysnoiseis specifiedin LDOdatasheetsandwhichspecificationshouldbe usedin theapplication.Finallyit explainshow LDOnoiseis reduced.
Linea modelo
Serie: LFC789D25 (1)
Clasificación del fabricante
- Semiconductors> Power Management> Linear Regulator (LDO)> LDO Controller (External FET)