Datasheet Texas Instruments THS4631 — Ficha de datos

FabricanteTexas Instruments
SerieTHS4631
Datasheet Texas Instruments THS4631

Amplificador operacional de entrada FET de alta velocidad

Hojas de datos

High-Voltage High Slew Rate Wideband FET-Input Op Amp datasheet
PDF, 1.4 Mb, Revisión: B, Archivo publicado: agosto 17, 2011
Extracto del documento

Precios

Estado

THS4631DTHS4631DDATHS4631DE4THS4631DGNTHS4631DGNG4THS4631DGNRTHS4631DGNRG4THS4631DRTHS4631DRG4
Estado del ciclo de vidaActivo (Recomendado para nuevos diseños)Activo (Recomendado para nuevos diseños)Activo (Recomendado para nuevos diseños)Activo (Recomendado para nuevos diseños)Activo (Recomendado para nuevos diseños)Activo (Recomendado para nuevos diseños)Activo (Recomendado para nuevos diseños)Activo (Recomendado para nuevos diseños)Activo (Recomendado para nuevos diseños)
Disponibilidad de muestra del fabricanteNoNoNoNo

Embalaje

THS4631DTHS4631DDATHS4631DE4THS4631DGNTHS4631DGNG4THS4631DGNRTHS4631DGNRG4THS4631DRTHS4631DRG4
N123456789
Pin888888888
Package TypeDDDADDGNDGNDGNDGNDD
Industry STD TermSOICHSOICSOICHVSSOPHVSSOPHVSSOPHVSSOPSOICSOIC
JEDEC CodeR-PDSO-GR-PDSO-GR-PDSO-GS-PDSO-GS-PDSO-GS-PDSO-GS-PDSO-GR-PDSO-GR-PDSO-G
Package QTY7575758080250025002500
CarrierTUBETUBETUBETUBETUBELARGE T&RLARGE T&RLARGE T&R
Device Marking463146314631ADKADKADKADK4631
Width (mm)3.913.93.9133333.913.91
Length (mm)4.94.894.933334.94.9
Thickness (mm)1.581.481.581.021.021.021.021.581.58
Pitch (mm)1.271.271.27.65.65.65.651.271.27
Max Height (mm)1.751.71.751.11.11.11.11.751.75
Mechanical DataDescargarDescargarDescargarDescargarDescargarDescargarDescargarDescargarDescargar

Paramétricos

Parameters / ModelsTHS4631D
THS4631D
THS4631DDA
THS4631DDA
THS4631DE4
THS4631DE4
THS4631DGN
THS4631DGN
THS4631DGNG4
THS4631DGNG4
THS4631DGNR
THS4631DGNR
THS4631DGNRG4
THS4631DGNRG4
THS4631DR
THS4631DR
THS4631DRG4
THS4631DRG4
2nd Harmonic, dBc7676767676767676
2nd Harmonic(dBc)76
3rd Harmonic, dBc9494949494949494
3rd Harmonic(dBc)94
@ MHz555555555
Acl, min spec gain, V/V11111111
Acl, min spec gain(V/V)1
Additional FeaturesN/AN/AN/AN/AN/AN/AN/AN/AN/A
Approx. Price (US$)2.60 | 1ku
ArchitectureFET,Voltage FBFET,Voltage FBFET,Voltage FBFET,Voltage FBFET,Voltage FBFET,Voltage FBFET,Voltage FBFET,Voltage FBFET
Voltage FB
BW @ Acl, MHz325325325325325325325325
BW @ Acl(MHz)325
CMRR(Min), dB8686868686868686
CMRR(Min)(dB)86
CMRR(Typ), dB9595959595959595
CMRR(Typ)(dB)95
GBW(Typ), MHz325325325325325325325325
GBW(Typ)(MHz)325
Input Bias Current(Max), pA100100100100100100100100
Input Bias Current(Max)(pA)100
Iq per channel(Max), mA1313131313131313
Iq per channel(Max)(mA)13
Iq per channel(Typ), mA11.511.511.511.511.511.511.511.5
Iq per channel(Typ)(mA)11.5
Number of Channels11111111
Number of Channels(#)1
Offset Drift(Typ), uV/C2.52.52.52.52.52.52.52.5
Offset Drift(Typ)(uV/C)2.5
Operating Temperature Range, C-40 to 85-40 to 85-40 to 85-40 to 85-40 to 85-40 to 85-40 to 85-40 to 85
Operating Temperature Range(C)-40 to 85
Output Current(Typ), mA9595959595959595
Output Current(Typ)(mA)95
Package GroupSOICSO PowerPADSOICMSOP-PowerPADMSOP-PowerPADMSOP-PowerPADMSOP-PowerPADSOICSOIC
Package Size: mm2:W x L, PKG8SOIC: 29 mm2: 6 x 4.9(SOIC)8SO PowerPAD: 29 mm2: 6 x 4.9(SO PowerPAD)8SOIC: 29 mm2: 6 x 4.9(SOIC)8MSOP-PowerPAD: 15 mm2: 4.9 x 3(MSOP-PowerPAD)8MSOP-PowerPAD: 15 mm2: 4.9 x 3(MSOP-PowerPAD)8MSOP-PowerPAD: 15 mm2: 4.9 x 3(MSOP-PowerPAD)8MSOP-PowerPAD: 15 mm2: 4.9 x 3(MSOP-PowerPAD)8SOIC: 29 mm2: 6 x 4.9(SOIC)
Package Size: mm2:W x L (PKG)See datasheet (SON)
Rail-to-RailNoNoNoNoNoNoNoNoNo
RatingCatalogCatalogCatalogCatalogCatalogCatalogCatalogCatalogCatalog
Slew Rate(Typ), V/us10001000100010001000100010001000
Slew Rate(Typ)(V/us)1000
Total Supply Voltage(Max), +5V=5, +/-5V=103232323232323232
Total Supply Voltage(Max)(+5V=5, +/-5V=10)32
Total Supply Voltage(Min), +5V=5, +/-5V=101010101010101010
Total Supply Voltage(Min)(+5V=5, +/-5V=10)10
Vn at 1kHz(Typ), nV/rtHz77777777
Vn at Flatband(Typ), nV/rtHz77777777
Vn at Flatband(Typ)(nV/rtHz)7
Vos (Offset Voltage @ 25C)(Max), mV0.50.50.50.50.50.50.50.5
Vos (Offset Voltage @ 25C)(Max)(mV)0.5

Plan ecológico

THS4631DTHS4631DDATHS4631DE4THS4631DGNTHS4631DGNG4THS4631DGNRTHS4631DGNRG4THS4631DRTHS4631DRG4
RoHSObedienteObedienteObedienteObedienteObedienteObedienteObedienteObedienteDesobediente
Pb gratisNo

Notas de aplicación

  • Transimpedance Considerations for High-Speed Operational Amplifiers
    PDF, 193 Kb, Archivo publicado: nov 22, 2009
    Designing high-resolution detection circuits using photodiodes presents considerable challenges because bandwidth, gain, and input-referred noise are coupled together. This application note reviews the basic issues of transimpedance design, provides a set of detailed design equations, explains those equations, and develops an approach to easily compare potential solutions.
  • Transimpedance Amplifiers (TIA): Choosing the Best Amplifier for the job (Rev. A)
    PDF, 153 Kb, Revisión: A, Archivo publicado: mayo 16, 2017
    This application note is intended as a guide for the designer looking to amplify the small signal from a photodiode or avalanche diode so that it would be large enough for further processing (e.g. data acquisition) or to trigger some other event in a system. The challenge in doing so, as always, is to not degrade the signal such that it becomes indistinguishable from random noi
  • Noise Analysis for High Speed Op Amps (Rev. A)
    PDF, 256 Kb, Revisión: A, Archivo publicado: enero 17, 2005
    As system bandwidths have increased an accurate estimate of the noise contribution for each element in the signal channel has become increasingly important. Many designers are not however particularly comfortable with the calculations required to predict the total noise for an op amp or in the conversions between the different descriptions of noise. Considerable inconsistency between manufactu

Linea modelo

Clasificación del fabricante

  • Semiconductors> Amplifiers> Operational Amplifiers (Op Amps)> High-Speed Op Amps (>=50MHz)