Datasheet Texas Instruments TLV2314 — Ficha de datos
| Fabricante | Texas Instruments |
| Serie | TLV2314 |
Amplificador operacional de 3 MHz, baja potencia, bajo nivel de ruido, RRIO, CMOS para sistemas sensibles al costo
Hojas de datos
TLVx314 3-MHz, Low-Power, Internal EMI Filter, RRIO, Operational Amplifier datasheet
PDF, 1.5 Mb, Revisión: A, Archivo publicado: marzo 22, 2016
Extracto del documento
Estado
| TLV2314IDGKR | TLV2314IDGKT | TLV2314IDR | |
|---|---|---|---|
| Estado del ciclo de vida | Activo (Recomendado para nuevos diseños) | Activo (Recomendado para nuevos diseños) | Activo (Recomendado para nuevos diseños) |
| Disponibilidad de muestra del fabricante | Sí | No | Sí |
Embalaje
| TLV2314IDGKR | TLV2314IDGKT | TLV2314IDR | |
|---|---|---|---|
| N | 1 | 2 | 3 |
| Pin | 8 | 8 | 8 |
| Package Type | DGK | DGK | D |
| Industry STD Term | VSSOP | VSSOP | SOIC |
| JEDEC Code | R-PDSO-G | R-PDSO-G | R-PDSO-G |
| Package QTY | 2500 | 250 | 2500 |
| Carrier | LARGE T&R | SMALL T&R | LARGE T&R |
| Device Marking | 13E7 | 13E7 | V2314 |
| Width (mm) | 3 | 3 | 3.91 |
| Length (mm) | 3 | 3 | 4.9 |
| Thickness (mm) | .97 | .97 | 1.58 |
| Pitch (mm) | .65 | .65 | 1.27 |
| Max Height (mm) | 1.07 | 1.07 | 1.75 |
| Mechanical Data | Descargar | Descargar | Descargar |
Paramétricos
| Parameters / Models | TLV2314IDGKR | TLV2314IDGKT | TLV2314IDR |
|---|---|---|---|
| Additional Features | Cost Optimized,EMI Hardened | Cost Optimized,EMI Hardened | Cost Optimized,EMI Hardened |
| Architecture | CMOS | CMOS | CMOS |
| CMRR(Min), dB | 72 | 72 | 72 |
| CMRR(Typ), dB | 96 | 96 | 96 |
| GBW(Typ), MHz | 3 | 3 | 3 |
| Iq per channel(Max), mA | 0.25 | 0.25 | 0.25 |
| Iq per channel(Typ), mA | 0.150 | 0.150 | 0.150 |
| Number of Channels | 2 | 2 | 2 |
| Offset Drift(Typ), uV/C | 2 | 2 | 2 |
| Operating Temperature Range, C | -40 to 125 | -40 to 125 | -40 to 125 |
| Output Current(Typ), mA | 20 | 20 | 20 |
| Package Group | VSSOP | VSSOP | SOIC |
| Package Size: mm2:W x L, PKG | 8VSSOP: 15 mm2: 4.9 x 3(VSSOP) | 8VSSOP: 15 mm2: 4.9 x 3(VSSOP) | 8SOIC: 29 mm2: 6 x 4.9(SOIC) |
| Rail-to-Rail | In,Out | In,Out | In,Out |
| Rating | Catalog | Catalog | Catalog |
| Slew Rate(Typ), V/us | 1.5 | 1.5 | 1.5 |
| Total Supply Voltage(Max), +5V=5, +/-5V=10 | 5.5 | 5.5 | 5.5 |
| Total Supply Voltage(Min), +5V=5, +/-5V=10 | 1.8 | 1.8 | 1.8 |
| Vn at 1kHz(Typ), nV/rtHz | 16 | 16 | 16 |
| Vos (Offset Voltage @ 25C)(Max), mV | 3 | 3 | 3 |
Plan ecológico
| TLV2314IDGKR | TLV2314IDGKT | TLV2314IDR | |
|---|---|---|---|
| RoHS | Obediente | Obediente | Obediente |
Linea modelo
Serie: TLV2314 (3)
Clasificación del fabricante
- Semiconductors> Amplifiers> Operational Amplifiers (Op Amps)> General-Purpose Op Amps