Datasheet Infineon SIGC03T60SNCX1SA1 — Ficha de datos

SIGC03T60SNC
IGBT Chip in NPT-technology
C FEATURES: 600V NPT technology 100Вµm chip short circuit prove positive temperature coefficient easy paralleling Chip Type VCE SIGC03T60SNC 600V This chip is used for: IGBT Modules
G Applications: drives ICn
2A Die Size Package 1.78 x 1.78 mm2 sawn on foil E Ordering Code
Q67041-A3000A002 MECHANICAL PARAMETER:
Raster size 1.78 x 1.78 Area total / active 3.2 / 1.7 Emitter pad size 1.1 x 1.1 (L-shaped) Gate pad size mm 2 0.55 x 0.45 Thickness 100 Вµm Wafer size 150 mm Flat position 0 deg Max.possible chips per wafer 4900 Passivation frontside Photoimide Emitter metallization 3200 nm Al Si 1% Collector metallization
Die bond
Wire bond
Reject Ink Dot Size
Recommended Storage Environment 1400 nm Ni Ag –system
suitable for epoxy and soft solder die bonding
electrically conductive glue or solder
Al, <250Вµm
в€… 0.65mm ; max 1.2mm
store in original container, in dry nitrogen,
< 6 month at an ambient temperature of 23В°C Edited by INFINEON Technologies AI PS DD HV3, L 7192-S, Edition 2, 28.11.2003 SIGC03T60SNC
MAXIMUM RATINGS:
Parameter Symbol Value Unit 600 V Collector-emitter voltage, Tj=25 В°C V CE DC collector current, limited by Tjmax IC 1) A Pulsed collector current, tp limited by Tjmax Icpuls 6 A Gate emitter voltage V GE В±20 V Operating junction and storage temperature Tj, Ts t g -55 . +150 В°C 1) depending on thermal properties of assembly STATIC CHARACTERISTICS (tested on chip), Tj=25 В°C, unless otherwise specified:
Parameter Symbol Value Conditions
min. Unit typ. max. Collector-emitter breakdown voltage V(BR)CES VGE=0V, IC =500ВµA 600 Collector-emitter saturation voltage VCE(sat) VGE=15V, IC =2A 1.6 1.9 2.5 Gate-emitter threshold voltage VGE(th) IC =150ВµA, VGE=VCE 3 4 5 Zero gate voltage collector current ICES VCE=600V, VGE=0V 0.3 ВµA Gate-emitter leakage current IGES VCE=0V, VGE=20V 120 nA V DYNAMIC CHARACTERISTICS (tested at component):
Parameter Symbol Conditions Value
min. typ. max. Input capacitance Ci V C E= 2 5 V -142 170 Output capacitance Co V GE= 0 V -18 22 Cr f =1MHz -10 12 Reverse transfer capacitance Unit …