Datasheet Microchip VP2110K1-G — Ficha de datos

Supertex inc. VP2110 P-Channel Enhancement-Mode
Vertical DMOS FET
General Description Features в–єв–є
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в–єв–є The Supertex VP2110 is an enhancement-mode (normallyoff) transistor that utilizes a vertical DMOS structure and
Supertex’s well-proven silicon-gate manufacturing process.
This combination produces a device with the power handling
capabilities of bipolar transistors, and the high input
impedance and positive temperature coefficient inherent
in MOS devices. Characteristic of all MOS structures, this
device is free from thermal runaway and thermally-induced
secondary breakdown. Free from secondary breakdown
Low power drive requirement
Ease of paralleling
Low CISS and fast switching speeds
Excellent thermal stability
Integral source-to-drain diode
High input impedance and high gain Applications в–єв–є
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