Datasheet Microchip ATTINY104-SSN — Ficha de datos

8-bit AVR Microcontroller ATtiny102 / ATtiny104
DATASHEET COMPLETE Introduction
В® The Atmel ATtiny102/ATtiny104 is a low-power CMOS 8-bit microcontroller
based on the AVRВ® enhanced RISC architecture. By executing powerful
instructions in a single clock cycle, the ATtiny102/ATtiny104 achieves
throughputs close to 1 MIPS per MHz. This empowers system designer to
optimize the device for power consumption versus processing speed. Feature
High Performance, Low Power AtmelВ® AVRВ® 8-Bit Microcontroller Family Advanced RISC Architecture
– 54 Powerful Instructions
– Mostly Single Clock Cycle Execution
– 16 x 8 General Purpose Working Registers
– Fully Static Operation
– Up to 12 MIPS Throughput at 12MHz Non-volatile Program and Data Memories
– 1024 Bytes of In-system Programmable Flash Program Memory
– 32 Bytes Internal SRAM
– Flash Write/Erase Cycles: 10,000
– Data Retention: 20 Years at 85°C / 100 Years at 25°C
– Self-programming Flash on Full Operating Voltage Range (1.8 –
5.5V) Peripheral Features
– One 16-bit Timer/Counter (TC) with Prescaler, Input Capture,
Two Output Capture and Two PWM Channels
– Programmable Watchdog Timer (WDT) with Separate On-chip
Oscillator …

8-bit AVR Microcontroller ATtiny102/ATtiny104
DATASHEET SUMMARY Introduction
В® The Atmel ATtiny102/ATtiny104 is a low-power CMOS 8-bit microcontroller
based on the AVRВ® enhanced RISC architecture. By executing powerful
instructions in a single clock cycle, the ATtiny102/ATtiny104 achieves
throughputs close to 1 MIPS per MHz. This empowers system designer to
optimize the device for power consumption versus processing speed. Feature
High Performance, Low Power AtmelВ® AVRВ® 8-Bit Microcontroller Family Advanced RISC Architecture
– 54 Powerful Instructions
– Mostly Single Clock Cycle Execution
– 16 x 8 General Purpose Working Registers
– Fully Static Operation
– Up to 12 MIPS Throughput at 12MHz Non-volatile Program and Data Memories
– 1024 Bytes of In-system Programmable Flash Program Memory
– 32 Bytes Internal SRAM
– Flash Write/Erase Cycles: 10,000
– Data Retention: 20 Years at 85°C / 100 Years at 25°C
– Self-programming Flash on Full Operating Voltage Range (1.8 –
5.5V) Peripheral Features
– One 16-bit Timer/Counter (TC) with Prescaler, Input Capture,
Two Output Capture and Two PWM Channels
– Programmable Watchdog Timer (WDT) with Separate On-chip
Oscillator …