Datasheet Intersil ISL74422ARH — Ficha de datos

DATASHEET
ISL74422ARH FN9031
Rev 2.00
April 1, 2010 Radiation Hardened 9A, Non-Inverting Power MOSFET Drivers
The Radiation Hardened ISL74422ARH is a noninverting, monolithic high-speed MOSFET driver
designed to convert a CMOS level input signal into a
high current output at voltages up to 18V. Its fast rise
times and high current output allow very quick control
of even the largest power MOSFETs in high frequency
applications.
The input of the ISL74422ARH can be directly driven
by our HS-1825ARH and IS-1845ASRH PWM devices.
The 9A high current output minimizes power losses in
MOSFETs by rapidly charging and discharging high gate
capacitances.
Constructed with the Intersil dielectrically isolated Rad
Hard Silicon Gate (RSG) BiCMOS process, these
devices are immune to Single Event Latch-up and have
been specifically designed to provide highly reliable
performance in harsh radiation environments. Features QML Qualified per MIL-PRF-38535 Requirements Electrically Screened to DSCC SMD # 5962-01521 Radiation Environment
-Total Dose (Max) . 300krad(SI)
-Latch-Up Immune IPEAK 9A(Min) TF (CL = 10,000pF) 70ns(Typ); 90ns(Max) TR (CL = 10,000pF) . 90ns(Typ); 105ns(Max) Prop Delay High-Low (CL = 10,000pF) 75ns(Max), 55ns(Typ) Prop Delay Low-High (CL = 10,000pF) 50ns(Max), 30ns(Typ) Consistent Delay Times with VCC Changes Wide Supply Voltage Range . 7V to 18V Specifications for Rad Hard QML devices are
controlled by the Defense Supply Center in …