Datasheet Diodes DGTD65T15H2TF — Ficha de datos
| Fabricante | Diodes |
| Serie | DGTD65T15H2TF |
| Numero de parte | DGTD65T15H2TF |
650V Field Stop IGBT
Hojas de datos
Datasheet DGTD65T15H2TF
PDF, 1.8 Mb, Idioma: en, Archivo subido: marzo 26, 2019, Páginas: 9
650V Field Stop IGBT
650V Field Stop IGBT
Extracto del documento
Descripción detallada
El DGTD65T15H2TF se produce utilizando la avanzada tecnología Field Stop Trench IGBT, que proporciona un alto rendimiento, excelente calidad y alta resistencia.
Paramétricos
| IGBT Type | Field Stop |
| Voltage - Collector Emitter Breakdown (Max) | 650 V |
| Current - Collector (Ic) (Max) | 30 A |
| Current - Collector Pulsed (Icm) | 60 A |
| Power - Max | 48 W |
| Input Type | Standard |
| Gate Charge | 61 nC |
| Reverse Recovery Time (trr) | 150 ns |
| Operating Temperature | -40~175 °C |
| Mounting Type | Through Hole |
| Package / Case | TO-220-3 Full Pack, Isolated Tab  |
| Product Status | Active |
| Packaging | Tube |
Embalaje
| Package | ITO220AB (Type MC) |
Paramétricos
| Anti Parallel Diode | Yes |
| EOFF typ @ +25°C | 0.086 mJ |
| EON typ @ +25°C | 0.27 mJ |
| IC @ +100°C | 15 A |
| IC @ +25°C | 30 A |
| Power Dissipation @ TC = +25°C | 48 W |
| Short Circuit | 5 µs |
| VCE(sat) max @ +25°C | 2 V |
| VCE(sat) typ @ +25°C | 1.65 V |
| VCES | 650 V |
Clasificación del fabricante
- Discrete > IGBTs