Datasheet Diodes DGTD65T40S2PT — Ficha de datos
| Fabricante | Diodes |
| Serie | DGTD65T40S2PT |
| Numero de parte | DGTD65T40S2PT |
Parada de campo de 650 V IGBT en TO247
Hojas de datos
Datasheet DGTD65T40S2PT
PDF, 1.4 Mb, Idioma: en, Archivo subido: marzo 26, 2019, Páginas: 9
650V Field Stop IGBT In TO247
650V Field Stop IGBT In TO247
Extracto del documento
Descripción detallada
El DGTD65T40S2PT se produce utilizando la avanzada tecnología Field Stop Trench IGBT, que proporciona una excelente calidad y un alto rendimiento de conmutación.
Paramétricos
| IGBT Type | Field Stop |
| Voltage - Collector Emitter Breakdown (Max) | 650 V |
| Current - Collector (Ic) (Max) | 80 A |
| Current - Collector Pulsed (Icm) | 120 A |
| Power - Max | 230 W |
| Input Type | Standard |
| Gate Charge | 60 nC |
| Reverse Recovery Time (trr) | 60 ns |
| Operating Temperature | -40~175 °C |
| Mounting Type | Through Hole |
| Package / Case | TO-247-3  |
| Product Status | Obsolete |
| Packaging | Tube |
Embalaje
| Package | TO247 (Type MC) |
Paramétricos
| Anti Parallel Diode | Yes |
| EOFF typ @ +25°C | 0.4 mJ |
| EON typ @ +25°C | 0.5 mJ |
| IC @ +100°C | 40 A |
| IC @ +25°C | 80 A |
| Power Dissipation @ TC = +25°C | 230 W |
| VCE(sat) max @ +25°C | 2.3 V |
| VCE(sat) typ @ +25°C | 1.8 V |
| VCES | 650 V |
Clasificación del fabricante
- Discrete > IGBTs