Datasheet Diodes DGTD65T50S1PT — Ficha de datos
| Fabricante | Diodes |
| Serie | DGTD65T50S1PT |
| Numero de parte | DGTD65T50S1PT |
650V Field Stop IGBT
Hojas de datos
Datasheet DGTD65T50S1PT
PDF, 1.7 Mb, Idioma: en, Archivo subido: marzo 26, 2019, Páginas: 9
650V Field Stop IGBT
650V Field Stop IGBT
Extracto del documento
Paramétricos
| IGBT Type | Field Stop |
| Voltage - Collector Emitter Breakdown (Max) | 650 V |
| Current - Collector (Ic) (Max) | 100 A |
| Current - Collector Pulsed (Icm) | 200 A |
| Power - Max | 375 W |
| Input Type | Standard |
| Gate Charge | 287 nC |
| Reverse Recovery Time (trr) | 80 ns |
| Operating Temperature | -40~175 °C |
| Mounting Type | Through Hole |
| Package / Case | TO-247-3  |
| Product Status | Obsolete |
| Packaging | Tube |
Embalaje
| Package | TO247 (Type MC) |
Paramétricos
| Anti Parallel Diode | Yes |
| EOFF typ @ +25°C | 0.55 mJ |
| EON typ @ +25°C | 0.77 mJ |
| IC @ +100°C | 50 A |
| IC @ +25°C | 100 A |
| Power Dissipation @ TC = +25°C | 375 W |
| Short Circuit | 5 µs |
| VCE(sat) max @ +25°C | 2.4 V |
| VCE(sat) typ @ +25°C | 1.85 V |
| VCES | 650 V |
Clasificación del fabricante
- Discrete > IGBTs