71 GHz to 76 GHz,
E-Band Variable Gain Amplifier
HMC8120 Data Sheet
FEATURES GENERAL DESCRIPTION Gain: 22 dB typical
Wide gain control range: 15 dB typical
Output third-order intercept (OIP3): 30 dBm typical
Output power for 1 dB compression (P1dB): 21 dBm typical
Saturated output power (PSAT): 22 dBm typical
DC supply: 4 V at 250 mA
No external matching required
Die size: 3.599 mm × 1.369 mm × 0.05 mm The HMC8120 is an integrated E-band, gallium arsenide (GaAs),
pseudomorphic (pHEMT), monolithic microwave integrated
circuit (MMIC), variable gain amplifier and/or driver amplifier
that operates from 71 GHz to 76 GHz. The HMC8120 provides up
to 22 dB of gain, 21 dBm of output P1dB, 30 dBm of OIP3, and
22 dBm of PSAT while requiring only 250 mA from a 4 V power
supply. Two gain control voltages (VCTL1 and VCTL2) are provided
to allow up to 15 dB of variable gain control. The HMC8120
exhibits excellent linearity and is optimized for E-band
communications and high capacity wireless backhaul radio
systems. All data is taken with the chip in a 50 Ω test fixture
connected via a 3 mil wide × 0.5 mil thick × 7 mil long ribbon
on each port. APPLICATIONS …