Datasheet Toshiba TPD7107F — Ficha de datos
| Fabricante | Toshiba |
| Serie | TPD7107F |
| Numero de parte | TPD7107F |
Dispositivo de alimentación inteligente (controlador MOSFET de alta potencia con bomba de carga incorporada)
Hojas de datos
Datasheet TPD7107F
PDF, 1.1 Mb, Idioma: en, Archivo publicado: abr, 2020, Páginas: 34
Intelligent Power Device Silicon Power MOS Integrated Circuit
Intelligent Power Device Silicon Power MOS Integrated Circuit
Extracto del documento
Embalaje
| Pins | 10 |
| Manufacture Package Code | WSON10A |
| Mounting | Surface Mount |
| Width×Length×Height | 3.0×3.0×0.75 mm |
Paramétricos
| AEC-Q100 | Qualified |
| Application Scope | Solenoid drivers / Relay Drivers |
| Assembly bases | Japan |
| Diagnostic Functions | Overcurrent / Overtemperature / Overvoltage / Undervoltage / Open load / Load current sensing / VDD short of load line |
| Drain-Source voltage | 40 V |
| Input / Output | H/H |
| Input / Output (Q1) | H/H |
| Input Voltage (Max) | 26 V |
| Input Voltage (Min) | -16 V |
| Junction temperature | 150 ℃ |
| Number of Circuits | 1 |
| Operating Supply Voltage (Max) | 26 V |
| Operating Supply Voltage (Min) | 5.75 V |
| Operating Temperature Max | 125 ℃ |
| Operating Temperature Min | -40 ℃ |
| Output Current | Internally Limited /-5m A |
| Power Dissipation | 1.84 W |
| Power Supply Voltage (Max) | 26 V |
| Protection Functions | Overcurrent / Thermal shutdown / Overvoltage / Undervoltage / Reverse battery / Abnormalities in Drain-source voltage of external FET / Active clamp(external FET) / Disconnection of GND terminal |
Plan ecológico
| RoHS | Obediente |
Clasificación del fabricante
- Semiconductor > Intelligent Power ICs