Datasheet Linear Systems PAD — Ficha de datos

PAD SERIES
PICO AMPERE DIODES
FEATURES
DIRECT REPLACEMENT FOR SILICONIX PAD SERIES
REVERSE BREAKDOWN VOLTAGE BVR ≥ -30V REVERSE CAPACITANCE Crss ≤ 2.0pF PAD1,2,5 PAD50 JPAD SSTPAD ABSOLUTE MAXIMUM RATINGS1
@ 25 °C (unless otherwise stated)
Maximum Temperatures
Storage Temperature -55 to +150 °C Operating Junction Temperature -55 to +150 °C Maximum Power Dissipation SOT-23
TOP VIEW Continuous Power Dissipation (PAD) 300mW Continuous Power Dissipation (J/SSTPAD) 350mW C
K 1 K
C 2 3 A Maximum Currents
Forward Current (PAD) 50mA Forward Current (J/SSTPAD) 10mA COMMON ELECTRICAL CHARACTERISTICS @ 25 °C (unless otherwise stated)
SYMBOL CHARACTERISTIC BVR Reverse Breakdown
Voltage VF MIN
ALL PAD -45 ALL SSTPAD -30 ALL JPAD -35 Forward Voltage Crss Total Reverse Capacitance TYP MAX UNITS IR = -1µA V
0.8 1.5 PAD1,5 0.5 0.8 All Others 1.5 2 CONDITIONS IF = 5mA
pF VR = -5V, f = 1MHz SPECIFIC ELECTRICAL CHARACTERISTICS @ 25 °C (unless otherwise stated)
SYMBOL IR 1.
2. CHARACTERISTIC Maximum Reverse
Leakage Current PAD
PAD1 -1 JPAD SSTPAD PAD2 -2 (SST/J)PAD5 -5 -5 -5 (SST/J)PAD10 -10 -10 -10 (SST/J)PAD20 -20 -20 -20 (SST/J)PAD50 -50 -50 -50 (SST/J)PAD100 -100 -100 (SST/J)PAD200 -200 (SST/J)PAD500 -500 UNITS pA CONDITIONS VR = -20V Derate 2mW/°C above 25°C
Derate 2.8mW/°C above 25°C Linear Integrated Systems • 4042 Clipper Court • Fremont, CA 94538 • Tel: 510 490-9160 • Fax: 510 353-0261
Doc 201142 03/03/2020 Rev#A7 ECN# PAD SERIES Figure 1. Operational Amplifier Protection …