Datasheet Analog Devices HMC-APH510-DIE — Ficha de datos

HMC-APH510
v03.0709 3 GaAs HEMT MMIC MEDIUM POWER
AMPLIFIER, 37 -40 GHz Typical Applications Features This HMC-APH510 is ideal for: Output IP3: +35 dBm • Point-to-Point Radios P1dB: +26 dBm • Point-to-Multi-Point Radios Gain: 20 dB • Military & Space Supply Voltage: +5V LINEAR & POWER AMPLIFIERS -CHIP 50 Ohm Matched Input/Output
Die Size: 3.76 x 0.92 x 0.1 mm General Description Functional Diagram The HMC-APH510 is a high dynamic range, three
stage GaAs HEMT MMIC Medium Power Amplifier
which operates between 37 and 40 GHz. The HMCAPH510 provides 20 dB of gain, and an output power
of +26 dBm at 1 dB compression from a +5V supply
voltage. All bond pads and the die backside are Ti/Au
metallized and the amplifier device is fully passivated
for reliable operation. The HMC-APH510 GaAs
HEMT MMIC Medium Power Amplifier is compatible
with conventional die attach methods, as well as
thermocompression and thermosonic wire bonding,
making it ideal for MCM and hybrid microcircuit
applications. All data shown herein is measured with
the chip in a 50 Ohm environment and contacted with
RF probes. Electrical Specifi cations, TA = +25° C,
Vdd1 = Vdd2 = Vdd3 = 5V, Idd1 + Idd2 + Idd3 = 640 mA [2]
Parameter Min. Frequency Range
Gain 18 Typ. Max. Units 37 -40 GHz 20 dB Input Return Loss 16 dB Output Return Loss 7 dB 26 dBm 35 dBm 640 mA Output power for 1dB Compression (P1dB) 25 Output Third Order Intercept (IP3) 33 Supply Current (Idd1+Idd2+Idd3)
[1] Unless otherwise indicated, all measurements are from probed die
[2] Adjust Vgg1=Vgg2=Vgg3 between -1V to +0.3V (typ. -0.5V) to achieve Idd total = 640 mA 3 -196 For price,
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