Datasheet Analog Devices HMC-APH196-DIE — Ficha de datos

HMC-APH196
v02.0209 LINEAR & POWER AMPLIFIERS -CHIP 3 GaAs HEMT MMIC MEDIUM POWER
AMPLIFIER, 17 -30 GHz Typical Applications Features This HMC-APH196 is ideal for: Output IP3: +31 dBm • Point-to-Point Radios P1dB: +22 dBm • Point-to-Multi-Point Radios Gain: 20 dB @ 20 GHz • VSAT Supply Voltage: +4.5V • Military & Space 50 Ohm Matched Input/Output
Die Size: 3.3 x 1.95 x 0.1 mm Functional Diagram General Description
The HMC-APH196 is a two stage GaAs HEMT
MMIC Medium Power Amplifier which operates
between 17 and 30 GHz. The HMC-APH196
provides 20 dB of gain at 20 GHz, and an output
power of +22 dBm at 1 dB compression from a +4.5V
supply voltage. All bond pads and the die backside
are Ti/Au metallized and the amplifier device is fully
passivated for reliable operation. The HMC-APH196
GaAs HEMT MMIC Medium Power Amplifier is
compatible with conventional die attach methods,
as well as thermocompression and thermosonic
wirebonding, making it ideal for MCM and hybrid
microcircuit applications. All data Shown herein is
measured with the chip in a 50 Ohm environment and
contacted with RF probes. Electrical Specifi cations, TA = +25° C, Vdd1 = Vdd2 = 4.5V, Idd1 + Idd2 = 400 mA [2]
Parameter Min Frequency Range
Gain Typ Max Min 17 -24
15 20 Typ Max Min 24 -27
14 17 11 Typ Max Units 27 -30 GHz 16 dB Input Return Loss 17 17 17 dB Output Return Loss 25 23 23 dB Output Power for 1 dB Compression (P1dB) …