Datasheet Analog Devices HMC8400-DIE — Ficha de datos

2 GHz to 30 GHz, GaAs
pHEMT MMIC Low Noise Amplifier
HMC8400 Data Sheet
FEATURES GENERAL DESCRIPTION Output power for 1 dB compression (P1dB): 14.5 dBm typical
Saturated output power (PSAT): 17 dBm typical
Gain: 13.5 dB typical
Noise figure: 2 dB
Output third-order intercept (IP3): 26.5 dBm typical
Supply voltage: 5 V at 67 mA
50 Ω matched input/output
Die size: 2.7 mm × 1.35 mm × 0.05 mm The HMC8400 is a gallium arsenide (GaAs), pseudomorphic
high electron mobility transistor (pHEMT), monolithic microwave
integrated circuit (MMIC). The HMC8400 is a wideband low
noise amplifier that operates between 2 GHz and 30 GHz. The
amplifier provides 13.5 dB of gain, a 2 dB noise figure, 26.5 dBm
output IP3, and 14.5 dBm of output power at 1 dB gain compression, requiring 67 mA from a 5 V supply. The HMC8400 is self
biased with only a single positive supply needed to achieve a
drain current IDD of 67 mA. The HMC8400 also has a gain control
option, VGG2. The HMC8400 amplifier input/outputs are internally
matched to 50 Ω and dc blocked, facilitating integration into
multichip modules (MCMs). All data is taken with the chip
connected via two 0.025 mm (1 mil) wire bonds of minimal
length 0.31 mm (12 mils). APPLICATIONS …