Data Sheet GaAs, pHEMT, MMIC, Power Amplifier,
2 GHz to 50 GHz
HMC1126 FEATURES FUNCTIONAL BLOCK DIAGRAM Output power for 1 dB compression (P1dB): 17.5 dB typical
Saturated output power (PSAT): 21 dBm typical
Gain: 11 dB typical
Output third-order intercept (IP3): 28 dBm typical
Supply voltage: 5 V at 65 mA
50 Ω matched input/output
Die size: 2.3 mm × 1.45 mm × 0.05 mm VDD
2 HMC1126 3 RFIN RFOUT 1 Test instrumentation
Microwave radios and VSATs
Military and space
Telecommunications infrastructure
Fiber optics 5 4 VGG1 VGG2 13083-001 APPLICATIONS Figure 1. GENERAL DESCRIPTION
The HMC1126 is a gallium arsenide (GaAs), pseudomorphic high
electron mobility transfer (pHEMT), monolithic microwave
integrated circuit (MMIC), distributed power amplifier that
operates from 2 GHz to 50 GHz. The HMC1126 provides 11 dB
of gain, 28 dBm output IP3, and 17.5 dBm of output power at 1 dB
gain compression, while requiring 65 mA from a 5 V supply. Rev. C The HMC1126 amplifier inputs/outputs are internally matched
to 50 Ω facilitating integration into multichip modules (MCMs).
All data is taken with the chip connected via two 0.025 mm (1 mil)
wire bonds of minimal length 0.31 mm (12 mils). Document Feedback Information furnished by Analog Devices is believed to be accurate and reliable. However, no …